1 V Rectifier Based on Bulk-Driven Quasi-Floating-Gate Differential Difference Amplifiers

Khateb, Fabian; Vlassis, S.; Kumngern, Montree; Psychalinos, Costas; Kulej, Tomasz; Vrba, R.; Fujcik, Lukáš

doi:10.1007/s00034-014-9958-3

Cited by 22 publications

(11 citation statements)

References 15 publications

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“…On the other hand, due to the fact that different LV circuits can be implemented in different technologies with threshold and supply voltage differences, the normalised threshold (N T ) factor which is defined as threshold-to-supply voltage ratio can be considered to investigate the capability of an active block to properly operate in the LV environment. It is worth mentioning that, higher values for N T parameter are desired in active blocks to show the efficiency of operation in LV conditions [3,4]…”

Section: Simulation Resultsmentioning

confidence: 99%

“…On the other hand, due to the fact that different LV circuits can be implemented in different technologies with threshold and supply voltage differences, the normalised threshold ( N T ) factor which is defined as threshold‐to‐supply voltage ratio can be considered to investigate the capability of an active block to properly operate in the LV environment. It is worth mentioning that, higher values for N T parameter are desired in active blocks to show the efficiency of operation in LV conditions [3, 4]

N_{T} = \frac{V_{T}}{V_{DD}} = \frac{0.296}{0.5} = 59.2 %

Furthermore, in order to investigate the performance of the proposed Gm‐C filter due to the variations in the operating temperature, the temperature analyses are performed in HSPICE, which are shown in Figs. 12–14 and summarised in Table 3.…”

Section: Simulation Resultsmentioning

confidence: 99%

“…Due to the increasing demand for portable electronic systems in different applications such as implantable and wearable biomedical devices and autonomous sensor nodes, which require smaller chip sizes and the ability to operate for longer time without recharging the battery, design of low-voltage (LV) and low-power (LP) integrated circuits is a challenging task [1][2][3][4][5][6][7]. However, bulk drive, subthreshold and floating gate are some of the advanced techniques for proper implementation of the LV/LP analogue circuits [1][2][3][4][5]. Despite, many disadvantages for the subthreshold devices, such as lower trans-conductance value as well as, the intrinsic voltage gain and cut-off frequency besides the larger value for the input referred noise, this technique seems to be still attractive in LV and LP applications especially when the supply voltage (V DD ) reduces to even less than the value of threshold voltage (V T ) [1].…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Inverter‐based, low‐power and low‐voltage, new mixed‐mode Gm‐C filter in subthreshold CNTFET technology

Zanjani

Dousti

Dolatshahi

2018

IET Circuits, Devices & Systems

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This study presents a new low-voltage and low-power, mixed-mode, universal Gm-C filter capable of generating simultaneous filtering outputs. The proposed circuit employs only 19 inverters as operational transconductance amplifiers, and 2 grounded capacitors in carbon nanotube field-effect transistor (CNTFET) technology. However, due to the proper use of subthreshold transistors biased at ±0.25 V supply, the power consumption of the proposed circuit is reduced effectively. Furthermore, as the HSPICE simulation results show, the proposed filter consumes only 11.66 µW of power, while its total harmonic distortion is obtained −55.4 dB at 100 MHz centre frequency. Moreover, the input referred noise values at 100 MHz are reduced to 11.57 nV/ Hz and 760 fA Hz in voltage and current modes, respectively.

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Section: Simulation Resultsmentioning

confidence: 99%

“…On the other hand, due to the fact that different LV circuits can be implemented in different technologies with threshold and supply voltage differences, the normalised threshold ( N T ) factor which is defined as threshold‐to‐supply voltage ratio can be considered to investigate the capability of an active block to properly operate in the LV environment. It is worth mentioning that, higher values for N T parameter are desired in active blocks to show the efficiency of operation in LV conditions [3, 4]

N_{T} = \frac{V_{T}}{V_{DD}} = \frac{0.296}{0.5} = 59.2 %

Section: Simulation Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Inverter‐based, low‐power and low‐voltage, new mixed‐mode Gm‐C filter in subthreshold CNTFET technology

Zanjani

Dousti

Dolatshahi

2018

IET Circuits, Devices & Systems

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“…In CMOS technology, due to the high value of the threshold voltage, reducing the voltage supply significantly limits the headroom of circuit operation. Therefore, innovative design techniques such as bulk‐driven, floating‐gate, quasi‐floating‐gate and their combination have been adopted to overcome the high value of the threshold voltage, to increase the input common mode range and to maintain other circuit's performance acceptable [5–34].…”

Section: Introductionmentioning

confidence: 99%

Low‐voltage fully differential difference transconductance amplifier

Khateb¹,

Kumngern

Kulej³

et al. 2017

IET Circuits, Devices & Systems

Self Cite

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A new complementary metal-oxide-semiconductor (CMOS) structure for fully differential difference transconductance amplifier (FDDTA) is presented in this study. Thanks to using the non-conventional quasi-floating-gate (QFG) technique the circuit is capable to work under low-voltage supply of 0.6 V with extended input voltage range and with class AB output stages. The QFG multiple-input metal-oxide-semiconductor transistor is used to reduce the count of the differential pairs that needed to realise the FDDTA with simple CMOS structure. The static power consumption of the proposed FDDTA is 40 µW. The FDDTA was designed in Cadence platform using 0.18 µm CMOS technology from Taiwan Semiconductor Manufacturing Company (TSMC). As an example of applications a three-stage quadrature oscillator and fifth-order elliptic low-pass filter are presented to confirm the attractive features of the proposed CMOS structure of the FDDTA.

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Nano–power‐integrated precision rectifiers for implantable medical devices

Alvarez

Arnaud

Gak

et al. 2020

Circuit Theory & Apps

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Summary Two ultralow power CMOS full‐wave precision rectifiers aimed at analog signal processing in implantable medical devices are presented. The rectifiers require no diodes and utilize a single or two transconductors (operational transconductance amplifier [OTA]) as the active element, to reduce power consumption to a minimum. First, a voltage‐to‐current rectifier consuming only a 120‐nA supply current is presented and later is used to estimate the average AC amplitude of a piezoelectric accelerometer output (0.5–15‐Hz bandwidth) in an adaptive pacemaker. This rectifier is based on a linearized transconductor and a comparator to toggle the output current sign. Then, a novel voltage rectifier consuming less than 10 nA is presented based on a single nanopower OTA and a pass transistor and later is utilized in a pacemaker's cardiac sensing channel (60–200‐Hz bandwidth) circuit, incorporating the rectifier to detect positive and negative voltage signal spikes. Both rectifiers were designed in a 0.6‐μm CMOS technology, fabricated, and tested, and the measurement results closely fit the expected performance.

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1 V Rectifier Based on Bulk-Driven Quasi-Floating-Gate Differential Difference Amplifiers

Cited by 22 publications

References 15 publications

Inverter‐based, low‐power and low‐voltage, new mixed‐mode Gm‐C filter in subthreshold CNTFET technology

Inverter‐based, low‐power and low‐voltage, new mixed‐mode Gm‐C filter in subthreshold CNTFET technology

Low‐voltage fully differential difference transconductance amplifier

Nano–power‐integrated precision rectifiers for implantable medical devices

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