1 MeV electron and 10 MeV proton irradiation effects on inverted metamorphic GaInP/GaAs/InGaAs triple junction solar cell

Li, J.; Aierken, Abuduwayiti; Zhuang, Yu; Wang, Lin; Wu, Hongqing; Zhang, Q.Y.; Wang, X.B.; Mo, Jing; Yang, Xin; Chen, Q.Y.; Zhang, S.Y.; Yan, C.R.; Song, Yifei

doi:10.1016/j.solmat.2021.111022

Cited by 25 publications

(14 citation statements)

References 35 publications

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“…The main type of defects introduced via beam irradiation of charged particles in solar cell materials corresponds to displacement damage, including vacancies and interstitials. [ 28,29 ] The displacement damage dose ( DDD ) approach is used to evaluate the degradation of solar cells as an effective method. [ 30,31 ] Nonionizing energy‐loss ( NIEL) corresponds to the energy lost by an electron while penetrating the material.…”

Section: Resultsmentioning

confidence: 99%

Electron Irradiation Effects and Defects Analysis of the Upright Metamorphic Four‐Junction (UMM4J) Solar Cells

Zhang

Zhou

Liu

et al. 2022

Physica Status Solidi (a)

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Herein, 1‐MeV electron irradiation is conducted to the AlGaInP (1.89 eV)/AlInGaAs (1.45 eV)/InGaAs (1.14 eV)/Ge (0.67 eV) upright metamorphic four‐junction (UMM4J) solar cell and its upper three key subcells. Light IV (LIV), external quantum efficiency (EQE), and deep level transient spectroscopy (DLTS) measurements are implemented to analyze the degradation of electric properties and evolution of defects of the UMM4J solar cell. The LIV results illustrate that the short circuit current (Isc), open circuit voltage (Voc), and maximum power (Pmax) degrade as a function of the logarithmic change of the electron fluence. EQE curves confirm the excellent anti‐irradiation characteristic of the AlGaInP (1.89 eV) subcell. Three types of electron traps E1 (Ec–0.16 eV), E2 (Ec–0.47 eV), and E3 (Ec–0.55 eV) are detected in the AlGaInP subcell. Two types of hole traps H1 (Ev + 0.35 eV) and H2 (Ev + 0.70 eV) are discovered in the AlInGaAs subcell and two types of hole traps H3 (Ev + 0.05 eV) and H4 (Ev + 0.36 eV) are observed in the InGaAs subcell. Nonionizing energy loss (NIEL) of 1‐MeV electrons in are calculated via Screened Relativist method. The defect concentrations show an approximately linear relationship with the displacement dose.

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Section: Resultsmentioning

confidence: 99%

Electron Irradiation Effects and Defects Analysis of the Upright Metamorphic Four‐Junction (UMM4J) Solar Cells

Zhang

Zhou

Liu

et al. 2022

Physica Status Solidi (a)

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“…This phenomenon could cause a loss of cell performance [ 50 , 72 ]. Other extensive studies are underway by many authors on the radiation of either electrons [ 12 , 77 ] or protons [ 78 , 79 ].…”

Section: Stability and Degradation Of Structuresmentioning

confidence: 99%

“…The high price is influenced not only by the cost of the wafer but also by subsequent production—expensive equipment. Li et al state that compared to silicon, the prices of GaAs cells are up to ten times higher [ 12 ]. In contrast, the prices of silicon cells are very affordable today.…”

Section: Introductionmentioning

confidence: 99%

Overview of the Current State of Gallium Arsenide-Based Solar Cells

et al. 2021

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As widely-available silicon solar cells, the development of GaAs-based solar cells has been ongoing for many years. Although cells on the gallium arsenide basis today achieve the highest efficiency of all, they are not very widespread. They have particular specifications that make them attractive, especially for certain areas. Thanks to their durability under challenging conditions, it is possible to operate them in places where other solar cells have already undergone significant degradation. This review summarizes past, present, and future uses of GaAs photovoltaic cells. It examines advances in their development, performance, and various current implementations and modifications.

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“…The threading dislocations generated by lattice mismatch can be reduced by using graded composition buffer layers [10]. Moreover, the inverted growth of the subcells minimizes the effect of dislocation propagation from the buffer layer [11][12][13]. At present, the inverted metamorphic triple-junction (IMM3J) GaInP/GaAs/InGaAs solar cell has a high conversion efficiency of 37.9% (AM1.5,1-sun) [14] and 32.1% (AM0, 1-sun) [15].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells

Yang

et al. 2022

Crystals

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Inverted metamorphic triple junction (IMM3J) GaInP/GaAs/InGaAs solar cells have the advantages of high efficiency, excellent radiation resistance, lightweight and flexible properties, especially suitable for space application. In this paper, we first fabricate the IMM3J GaInP/GaAs/InGaAs solar cell, which has a short circuit current density of 16.5 mA/cm2, an open circuit voltage of 3141.8 mV, a fill factor of 84.3%, and an efficiency of 32.2%. Then, the IMM3J solar cell is irradiated by 2 MeV protons with different fluences from 2 × 1011 cm−2 to 2 × 1012 cm−2. Finally, the output electrical properties of IMM3J solar cells at the beginning of life and end of life are analyzed by current-voltage characterization. The degradation behaviors of each subcell before and after irradiation can also be described by the external quantum efficiency and short circuit current density.

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1 MeV electron and 10 MeV proton irradiation effects on inverted metamorphic GaInP/GaAs/InGaAs triple junction solar cell

Cited by 25 publications

References 35 publications

Electron Irradiation Effects and Defects Analysis of the Upright Metamorphic Four‐Junction (UMM4J) Solar Cells

Electron Irradiation Effects and Defects Analysis of the Upright Metamorphic Four‐Junction (UMM4J) Solar Cells

Overview of the Current State of Gallium Arsenide-Based Solar Cells

Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells

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