2006 Norchip 2006
DOI: 10.1109/norchp.2006.329232
|View full text |Cite
|
Sign up to set email alerts
|

1 GHz Class E RF Power Amplifier For A Polar Transmitter

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
5
0

Year Published

2007
2007
2011
2011

Publication Types

Select...
4
3

Relationship

3
4

Authors

Journals

citations
Cited by 11 publications
(5 citation statements)
references
References 11 publications
0
5
0
Order By: Relevance
“…Advantages of inverse class E over classical realization are that the drain peak voltages are lower than in classical class E and the inductance values in the output circuitry are smaller, which can save area in a MMIC chip implementation and can usually give smaller electrical series resistance (ESR) [4]. Also, the possibility to accommondate series inductance as a part of resonating circuitry is useful, since the parasitic reactances can cause undamped resonances to drain waveforms [6,7]. These advantages were the reasons for choosing inverse class E topology as a starting point for our investigation.…”
Section: Class E and Inverse Class E Amplifiersmentioning
confidence: 99%
“…Advantages of inverse class E over classical realization are that the drain peak voltages are lower than in classical class E and the inductance values in the output circuitry are smaller, which can save area in a MMIC chip implementation and can usually give smaller electrical series resistance (ESR) [4]. Also, the possibility to accommondate series inductance as a part of resonating circuitry is useful, since the parasitic reactances can cause undamped resonances to drain waveforms [6,7]. These advantages were the reasons for choosing inverse class E topology as a starting point for our investigation.…”
Section: Class E and Inverse Class E Amplifiersmentioning
confidence: 99%
“…The target system was a polar transmitter consisting of a digital data separator, the modulated supply, and a 0.5 W class E switch-mode power amplifier designed using a discrete CLY5 GaAs MESFET [6]. These were tested as a complete polar transmitter with various modulating signals, and the same supply modulator was also used to drive a linear amplifier in an ET experiment.…”
Section: Resultsmentioning
confidence: 99%
“…It has been found out in previous work [5], that ZVS condition is quite sensitive to parasitic reactances, that easily generate additional and undamped resonances. Therefore it is beneficial either to bring the pulse-shaping resonator as close to the switch as possible or to somehow take the additonal impedances into account in the circuit design.…”
Section: B Design Of the Resonatormentioning
confidence: 96%