Integrated 1.6 GHz, 2W Tuned RF Power Amplifier

Abstract

This paper demonstrates a tuned power amplifier designed to operate at 1.6 GHz frequency. The basis of the design is inverse class E topology where the DC block is placed in a new position so that the blocking capacitor can be smaller. Further, very high currents flowing into the output resonator had to be taken into account in the design process of a integrated circuit (IC). Wide inductor lines and multi-finger, high-Q capacitors were used to reduce the losses and maximize the current capability of the resonator. The implemented Gallium Arsenide (GaAs) IC delivers about 2 W of output power with drain efficiency of ca. 56 %.