1.7kV trench IGBT with deep and separate floating p-layer designed for low loss, low EMI noise, and high reliability

Watanabe, So; Mori, M.; Arai, Takao; Ishibashi, K.; Toyoda, Yasushi; Oda, Tetsuo; Harada, Takashi; Saito, Kazutoshi

doi:10.1109/ispsd.2011.5890787

Cited by 22 publications

(18 citation statements)

References 5 publications

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“…To achieve this, one should consider the following design rules: 1) Carrier enhancement at the emitter for low on-state losses. The IGBT can be designed to have a dense plasma near the emitter by adopting Trench cell designs [18], implementing n-enhancement layers [19] or by reducing the mesa width between trenches [20]. Modern IGBTs, which are designed in accordance with one of these approaches, have to provide a sufficient hole injection from the collector side.…”

Section: Discussionmentioning

confidence: 99%

Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability

Reigosa

Iannuzzo

Rahimo

et al. 2018

2018 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Abstract-In this paper, a 3.3-kV Enhanced Trench IGBT has been designed with a high emitter efficiency, for improving its short-circuit robustness. The carrier distribution profile has been shaped in a way that it is possible to increase the electric field at the surface of the IGBT, and thereby, counteract the Kirk Effect onset. This design approach is beneficial for mitigating high-frequency oscillations, typically observed in IGBTs under short-circuit conditions. The effectiveness of the proposed design rule is validated by means of mixed-mode device simulations. Then, two IGBTs have been fabricated with different emitter efficiencies and tested under short circuit, validating that the high-frequency oscillations can be mitigated, with higher emitter efficiency IGBT designs.

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Section: Discussionmentioning

confidence: 99%

Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability

Reigosa

Iannuzzo

Rahimo

et al. 2018

2018 IEEE Applied Power Electronics Conference and Exposition (APEC)

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“…Hence the improvement of the trade-off generally requires complexities from the structural and wafer process points of view [40][41][42][43][44][45][46][47][48]. In the turn-off period, it is also inevitable to face almost same situations in order to obtain waveforms with lower di/dt or less surge voltage [40,44,45,48]. In addition, a rational balance of C gc versus C ge or C ec is an important parameter to achieve soft waveforms without any partial rapid portions or inflection points.…”

Section: Improving Usabilitymentioning

confidence: 99%

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Honda

Minato

Shimizu

et al. 2019

IET Power Electronics

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From the power loss reduction and safety operation points of view, the direction of power device developments is simply one-way. However, from the application point of view, the direction is wide-ranging. There are a variety of requirements to be considered, such as switching waveforms, operational environments including not only the temperature range but also the combination of the humidity, the cosmic ray endurance, the package compactness and so on. In this study, several efforts are explained as the latest technologies.

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“…where C GC(OX) is the gate oxide component of C GC and V GE is the gate-to-emitter voltage [1][2][3][4][5][6][7][8]. Clearly, C GC(OX) has the same value in the proposed TIGBT and the conventional one.…”

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confidence: 99%

“…However, too small C GC would cause a high dV/dt noise especially when the free-wheeling diode (FWD) operates at a small current [5]. Suppressing the increase of the potential of the floating P-base region (V Float ) has been proven to be very effective, but some other electrical characteristics, such as the on-state voltage or the breakdown voltage, would be affected [5][6][7][8]. Some efforts have been made to increase the gate-to-emitter capacitance (C GE ) to optimise the ratio of C GC to C GE , but it also increases C GC [9].…”

mentioning

confidence: 99%

TIGBT with emitter‐embedded gate for low turn‐on loss and low electro‐magnetic interference noise

Cheng

Chen

2018

Electron. lett.

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A trench insulated gate bipolar transistor (TIGBT) with emitterembedded gate is proposed. The emitter-embedded gate could increase the gate-to-emitter capacitance C GE without affecting the miller capacitance C GC. Therefore, the ratio of C GC to C GE is significantly reduced, which suppresses the gate self-charging effect effectively. As a result, an excellent controllability on the turn-on dI CE /dt of the TIGBT and the dV KA /dt of the freewheeling diode (FWD) is obtained. The simulation results based on a 1.2 kV TIGBT show that, in comparison with the conventional TIGBT, the lower limit of the reverse-recovery dV KA /dt of the FWD can be reduced by 91.2% and the turn-on loss could be reduced by 53.1% under the same dV KA /dt.

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1.7kV trench IGBT with deep and separate floating p-layer designed for low loss, low EMI noise, and high reliability

Cited by 22 publications

References 5 publications

Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability

Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

TIGBT with emitter‐embedded gate for low turn‐on loss and low electro‐magnetic interference noise

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