2005
DOI: 10.1109/lpt.2005.848398
|View full text |Cite
|
Sign up to set email alerts
|

1.55-/spl mu/m AlGaInAs-InP laterally coupled distributed feedback laser

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
4
0

Year Published

2007
2007
2019
2019

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 31 publications
(4 citation statements)
references
References 10 publications
0
4
0
Order By: Relevance
“…Different types of DFB gratings have been achieved including buried, [19][20][21] surface, [22][23][24][25] and ridge sidewall gratings. [26][27][28][29] The surface and sidewall gratings are the most suitable for green LDs since buried gratings require overgrowth, 30) which tends to compromise the material quality, particularly critical for InGaN-based green laser structures. 3) Related to fabrication, low-order gratings (first, second, etc.)…”
mentioning
confidence: 99%
“…Different types of DFB gratings have been achieved including buried, [19][20][21] surface, [22][23][24][25] and ridge sidewall gratings. [26][27][28][29] The surface and sidewall gratings are the most suitable for green LDs since buried gratings require overgrowth, 30) which tends to compromise the material quality, particularly critical for InGaN-based green laser structures. 3) Related to fabrication, low-order gratings (first, second, etc.)…”
mentioning
confidence: 99%
“…[15] LC-DFB is aimed at avoiding the oxidation of Al content in the epitaxy after the defining of grating, and it can also be used in GaAs and InP material to avert the re-growth step. [15][16][17] The GaAs-and InP-based LC-DFB lasers showed a good laser property which was very competitive compared with the traditional DFB laser and attracted a lot of attention. [15][16][17] So far, the continuous wave operation of GaSb-based LC-DFB laser diodes were reported to emit light beams at wavelengths of 2 µm, 2.3 µm, 2.6 µm, 2.8 µm, 3.4 µm.…”
Section: Introductionmentioning
confidence: 99%
“…[15][16][17] The GaAs-and InP-based LC-DFB lasers showed a good laser property which was very competitive compared with the traditional DFB laser and attracted a lot of attention. [15][16][17] So far, the continuous wave operation of GaSb-based LC-DFB laser diodes were reported to emit light beams at wavelengths of 2 µm, 2.3 µm, 2.6 µm, 2.8 µm, 3.4 µm. [5,[18][19][20] Owing to the mode selecting mechanism of LC-DFB lasers, the defining of subsize grating is the most important and difficult part.…”
Section: Introductionmentioning
confidence: 99%
“…2, which demonstrates excellent single-mode operation. [5] Laser diodes with etched facets are attractive as they make wafer level test possible, thus reducing the fabrication cost. We have fabricated AlGaInAs multiple quantum well (MQW) lasers with dry etched mirrors.…”
mentioning
confidence: 99%