“…[1][2][3] Therefore, the fabrication of the sub-0.1 m MOSFET devices requires the development of new gate dielectric materials with lower leakage current levels than SiO 2 at the same equivalent oxide thickness values. Alternative dielectric materials, such as Si 3 N 4 , Si 3 N 4 /SiO 2 stack, 4-8 Y 2 O 3 , 9 Al 2 O 3 , 10 TiO 2 , 11,12 Ta 2 O 5 , [13][14][15][16] SrTiO 3 , and (Ba x Sr 1Ϫx )TiO 3 17,18 have been suggested as candidate materials. These materials, however, have demonstrated issues of low dielectric constant values or poor thermal stability with Si substrates.…”