Characteristics of ZrO[sub 2] Films with Al and Pt Gate Electrodes

Abstract

We investigated interfacial stabilities of ZrO 2 films with Al and Pt electrodes formed by magnetron sputtering upon annealing and consequent changes of their metal-oxide-semiconductor capacitor characteristics. The as-deposited ZrO 2 films deposited using a sputtering power of 300 W were amorphous, while after annealing in N 2 at 600°C for 5 min the films became polycrystalline with a mixture of monoclinic and tetragonal phases. After the deposition of electrodes, we found that the amorphous interlayer which is presumed to be Al 2 O 3 was formed at the ZrO 2 /Al interface, while platinum ͑Pt͒ electrodes showed no interlayer at the interface with ZrO 2 films. The value of the capacitance equivalent thickness for the ZrO 2 film with the Al electrode was larger than that of the case with the Pt electrode by about 12 Å, which is due to the presence of the additional Al 2 O 3 interlayer at the Al/ZrO 2 interface. The capacitance-voltage measurement showed that the difference in flatband voltage (V FB ) between the ZrO 2 films and the two different electrodes is about 1.2 V, which is due to the work function difference between the two electrode materials.

Degradation of Pt-Al2O3-Ge Metal Oxide Semiconductor Structures due to Pt-Al2O3 Induced Reactions

“…For example, Al reacts with ZrO 2 and forms an Al 2 O 3 IL, where the driving force for this reaction is the lower free energy of Al 2 O 3 formation as compared to ZrO 2 . 29 However, the formation of Pt-Al alloy was quite unexpected, since direct bonding of Pt with Al requires the detachment of the Al from the oxygen ions, a highly improbable process due to the high stability of the Al 2 O 3 layer. In fact, similar works indicate that the Pt gate electrode deposition on Al 2 O 3 , via a mechanical mask or Pt deposition across the sample do not result in the formation of ILs.…”

Optical properties of dielectric layers with CeO2

“…To increase the dielectric permittivity ε , it is possible to introduce some changes into the technological process of film evaporation. For example, to carry out the evaporation in the environment of oxygen or nitrogen (NH 3 , N 2 ) with annealing treatment that, as is known [6,17,18], leads to film defect reduction.…”

Non-aqueous synthesis of crystalline Co3O4 nanoparticles for lithium-ion batteries

“…Cobalt oxide (Co 3 O 4 ) was regarded as an important functional material, in part because of its vast applications for use in pigments, catalysis, sensors, electrochemistry, magnetism, and energy storage (e.g., intercalation compounds for battery materials) [1][2][3]. The properties of the synthesized metal oxides strongly depend on their morphologies and structures, including particle size, orientations, size distribution, aspect ratios and even crystalline densities [4][5][6][7][8].…”