1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots

Mukai, Kohki; Nakata, Yoshihiro; Otsubo, Kenji; Sugawara, Mitsuru; Yokoyama, Naoki; Ishikawa, Hideaki

doi:10.1109/3.831025

Cited by 132 publications

(55 citation statements)

References 25 publications

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“…Figure 12 shows the temperature-dependent (10-50°C) P -I characteristics of a GaInNAs QD laser (50 · 1,700 lm InGaAs QD laser with longer cavity length. They reported that carrier overflow into the upper sublevels is reduced in long-cavity lasers since the threshold gain becomes smaller due to decrease in cavity loss [51]. This is consistent with the recently derived physical parameter-dependent semiconductor laser characteristics [15].…”

Section: Resultssupporting

confidence: 83%

“…Though these results are still inferior compared to their GaInNAs QW counterparts [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] and In(Ga)As QD lasers [49][50][51][52][53], however, the results in this work indicate that GaInNAs QDs have potential for longwavelength semiconductor laser application. Further improvement and optimization in the GaInNAs QD material growth are on-going for better crystal quality, higher GaInNAs QD densities and longer wavelength.…”

Section: Resultsmentioning

confidence: 87%

“…Further improvement and optimization in the GaInNAs QD material growth are on-going for better crystal quality, higher GaInNAs QD densities and longer wavelength. In the present work, single GaInNAs QD layer has been adopted; while in the future, the limited modal gain in QD lasers can be partly alleviated by stacking several high quality QD layers [51,53]. Furthermore, our recent work has shown that by suppressing the lateral current spreading in broad area lasers, the RWG laser performance can be greatly improved [17].…”

Section: Resultsmentioning

confidence: 94%

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Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

et al. 2006

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Self-assembled GaInNAs quantum dots (QDs) were grown on GaAs (001) substrate using solidsource molecular-beam epitaxy (SSMBE) equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM), photoluminescence (PL), and transmission electron microscopy (TEM) measurements. Self-assembled GaInNAs/GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave (CW) operation at room temperature (RT) with emission wavelength of 1175.86 nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is~1.05 kA/cm 2 from a GaInNAs QD laser (50 · 1,700 lm 2 ) at 10°C. High-temperature operation up to 65°C was demonstrated from an unbonded GaInNAs QD laser (50 · 1,060 lm 2 ), with high characteristic temperature of 79.4 K in the temperature range of 10-60°C.

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Section: Resultssupporting

confidence: 83%

Section: Resultsmentioning

confidence: 87%

Section: Resultsmentioning

confidence: 94%

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Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

et al. 2006

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“…These include sub-monolayer deposition [60], low growth rate [61] and InGaAs overgrowth [62,63]. Recently it was found [64] that multiple layers (up to 10) of InAs/InGaAs/ GaAs quantum dots considerably enhance the optical gain of quantum dot lasers emitting around 1.3 lm.…”

Section: Quantum Dot Lasersmentioning

confidence: 99%

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

Henini

2006

Nanoscale Res Lett

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One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two: quantum wires and quantum dots, in order to realize novel devices that make use of low-dimensional confinement effects. One of the promising fabrication methods is to use selforganized three-dimensional (3D) structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. This article is intended to convey the flavour of the subject by focussing on the structural, optical and electronic properties and device applications of self-assembled quantum dots and to give an elementary introduction to some of the essential characteristics.

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“…Using the SI-SO method, which is a self-assembled growth technology, a low-threshold current density of 16 A/cm 2 in 1.25-µm-wavelength InAs/GaInAs Q-dot lasers [70], a threshold current of 5.4 mA in 1.3-µm-wavelength GaInAs/GaAs Q-dot lasers [71], a threshold current of 17 mA and a submode suppression ratio (SMSR) of 55 dB in 1.3-µm-wavelength InAs/GaInAs Q-dot DFB lasers [72], and high-frequency operation [73] were demonstrated. To attain an emitting wavelength of 1.5 µm, InAs Q-dot lasers grown on (3 1 1)B-oriented InP substrate [74] and InAs Q-dash lasers on (1 0 0) InP substrate [75], [76] have been studied.…”

Section: B Long-wavelength Q-wire and Q-dot Lasersmentioning

confidence: 99%

GaInAsP/InP quantum-wire lasers

Arai¹,

Kojima²,

Nunoya³

et al. 1999

Fifth Asia-Pacific Conference on ... And Fourth Optoelectronics and Communications Conference on Communications,

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Abstract-Present status of GaInAsP/InP long-wavelength quantum wire lasers, fabricated by a method using electron beam exposure, dry etching, and two-step organometallic vapor-phase epitaxy, is described from aspects of low-damage interface formation and size uniformity of quantum wire structures. Even though superior lasing properties attributed to sharper gain spectrum over that of quantum well structure have not been realized yet, polarization anisotropic feature of the quantum wire structure and formation of good interfaces by this fabrication method were confirmed. Single-wavelength lasers consisting of quantum wire structure as the active and/or the passive regions have been realized as possible candidates for future integrated photonics.Index Terms-Distributed Bragg reflector (DBR) laser, distributed feedback (DFB) laser, distributed reflector (DR) laser, GaInAsP/InP, low-dimensional quantum well (QW) structure, polarization anisotropy, quantum wire laser.

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1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots

Cited by 132 publications

References 25 publications

Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

GaInAsP/InP quantum-wire lasers

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