1.29 [micro sign]m GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance

Borchert, B.; Egorov, A. Yu.; Illek, S.; Komainda, M.; Riechert, H.

doi:10.1049/el:19991513

Cited by 85 publications

(31 citation statements)

References 5 publications

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“…[1][2][3][4][5] The incorporation of a small amount of nitrogen ͑Ͻ2%͒ into the host material has been shown to lead to large redshift of the band gap due to the large electronegativity of nitrogen and the possibility of lattice matching to GaAs substrate. 6,7 A possible drawback of nitrogen incorporation appears to be the drastic drop in electron mobility as nitrogen is added.…”

Section: Introductionmentioning

confidence: 99%

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

Sun

Balkan

2009

Journal of Applied Physics

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We present the studies of energy and momentum relaxation dynamics of nonequilibrium holes in GaxIn1−xNyAs1−y/GaAs quantum well modulation doped with Be. Experimental results show that the real-space transfer (RST) of hot holes occurs via thermionic emission from the high-mobility GaInNAs quantum wells into the low-mobility GaAs barriers at a threshold electric field of F∼6 kV/cm at T=13 K. At this field the hole drift velocity saturates at vd∼1×107 cm/s. A slight increase in the field above the threshold leads to the impact ionization of acceptors in the barriers by the nonequilibrium holes. We observe and model theoretically a negative differential mobility effect induced by RST that occurs at an electric field of F∼7 kV/cm. The observed current surge at electric fields above 7 kV/cm is attributed to the hole multiplication induced by shallow impurity breakdown in the GaAs barrier and impact ionization in the high-field domain regime associated with the packet of RST of holes in the well.

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Section: Introductionmentioning

confidence: 99%

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

Sun

Balkan

2009

Journal of Applied Physics

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“…First demonstrations of the 1.3 /tm GaAs-VCSELs based on InAs QDs and InGaAsN QWs were presented in [1] and [2], respectively. The most outstanding results for edge emitting lasers were achieved by MBE grown InGaAsN QWs using RF (radio-frequency) plasma nitrogen source [3]. So far the same team has presented the best characteristics of 1.3 /tm VCSEL [4].…”

Section: Introductionmentioning

confidence: 99%

MBE growth of high-quality GaAsN bulk layers

et al. 2001

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“…3 Gao. 7 As, doped with Be and Si to 4 x 1017 and 5 x 1017 cm-3 , respectively. The 0.6 /tm thick p-type GaAs contact layer is doped to (1-5) x 1019 cm-3 in the top 200 nm.…”

Section: Device Applicationmentioning

confidence: 99%

InGaAsN/GaAs heterostructures for long-wavelength light-emitting devices

et al. 2000

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Abstract. We report on the growth and properties of InGaAsN/GaAs heterostructures and on their applications for lasers emitting at X -1.3 jIm. Structures are grown by molecular beam epitaxy using an RF plasma-source. Broad area and ridge waveguide laser structures based on such QWs exhibit performance that can compete with those of 1.3 /m InGaAsP lasers. In particular, we have achieved 300 K operation of broad area lasers at 1.3 /Im with threshold current density down to 400 A/cm 2 and 650 A/cm 2 for single and triple QW structures. Similar structures with heatsinking at 10'C yield maximum output powers of 2.4 W (cw) and 4 W (pulsed). Ridge waveguide lasers have thresholds down to 16 mA and show cw operation up to 10"C with a To of up to 110 K.

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1.29 [micro sign]m GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance

Cited by 85 publications

References 5 publications

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

MBE growth of high-quality GaAsN bulk layers

InGaAsN/GaAs heterostructures for long-wavelength light-emitting devices

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