1.26 μm intersubband transitions in In0.3Ga0.7As/AlAs quantum wells

García, César Pascual; Nardis, Andrea De; Pellegrini, Vittorio; Jancu, J.-M.; Beltram, Fabio; Mueller, Bernhard; Sorba, L.; Franciosi, A.

doi:10.1063/1.1331347

Cited by 23 publications

(4 citation statements)

References 17 publications

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“…Various means of band engineering have been devised to realize normal incidence n-type III-V infrared devices with robust absorption oscillator strength (see, e.g., [11][12][13]).…”

Section: Introductionmentioning

confidence: 99%

Conduction intersubband transitions at normal incidence in Si_1−xGe_xquantum well devices

Virgilio

Grosso

2007

Nanotechnology

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We show theoretically that it is possible to design SiGe-based quantum well structures in which conduction intersubband transitions are induced by normal incidence infrared radiation. A sp(3)d(5)s(*) tight binding model has been adopted to evaluate the electronic states and optical transitions between lowest conduction confined states of a superlattice composed of one pure Ge quantum well separated by SiGe alloys, grown along the [001] direction. We find that significant optical coupling between confined states in the Ge wells is achieved at normal incidence radiation by the off-diagonal elements of the mass tensor. The minimum energy Ge conduction valleys are, in fact, tilted with respect to the [001] growth axis. For comparison we show that no such coupling can be realized for the conduction states confined in a similar structure composed by Si quantum wells because the ellipsoids of the lowest conduction valleys are oriented along the growth direction.

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“…Various means of band engineering have been devised to realize normal incidence n-type III-V infrared devices with robust absorption oscillator strength (see, e.g., [11][12][13]).…”

Section: Introductionmentioning

confidence: 99%

Conduction intersubband transitions at normal incidence in Si_1−xGe_xquantum well devices

Virgilio

Grosso

2007

Nanotechnology

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“…Experimental features at 1.520 eV and 1.9 eV correspond respectively to GaAs substrate and Al0.3Ga0.7As barrier erate on a three-level model to realize population inversions between the first and second excited states. Our TB model was demonstrated to give an accurate modeling of intersubband properties (dipole moment and energy) in strained quantum wells 27,28 . After corroborating our results for AlAs and InAs MLs insertion by comparison to experimental results of interband transitions in the previous section and in Ref.…”

Section: Intersubband Transitionsmentioning

confidence: 99%

Optical properties of potential-inserted quantum wells in the near infrared and Terahertz ranges

Raouafi

Samti

Benchamekh³

et al. 2016

Solid State Communications

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We propose an engineering of the optical properties of GaAs/AlGaAs quantum wells using AlAs and InAs monolayer insertions. A quantitative study of the effects of the monolayer position and the well thickness on the interband and intersubband transitions, based on the extended-basis sp 3 d 5 s * tight-binding model, is presented. The effect of insertion on the interband transitions is compared with existing experimental data. As for intersubband transitions, we show that in a GaAs/AlGaAs quantum well including two AlAs and one InAs insertions, a three level {e1, e2, e3} system where the transition energy e3 − e2 is lower and the transition energy e2 − e1 larger than the longitudinal optical phonon energy (36 meV) can be engineered together with a e3 − e2 transition energy widely tunable through the TeraHertz range.

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“…Though there is no demonstration of intersubband emissions in the InGaAsN-AlAs systems to date, the intersubband transitions in the In 0.3 Ga 0.7 As/ AlAs heterostructures at a wavelength as short as 1.26 m have been observed. 10 In addition to that, by adding a small amount of nitrogen atoms into the In x Ga 1−x As matrix to form the In x Ga 1−x As 1−y N y alloy, it was found to greatly reduce the band-gap energy and simultaneously reduce the compressive strain introduced in the well layer. 11 Moreover, the incorporation of N content will exclusively affect the conduction band edge, while leaving the valence band edge untouched.…”

Section: Introductionmentioning

confidence: 99%

Design of InxGa1−xAs1−yNy∕AlAs quantum cascade structures for 3.4μm intersubband emission

Dang

Fan

2007

Journal of Applied Physics

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We report the design of an active region of In x Ga 1−x As 1−y N y / AlAs quantum cascade laser structure emitting in the near infrared wavelength range based on an eight-band k • p model. The In x Ga 1−x As 1−y N y / AlAs heterostructure system is of significant interest for the development of short wavelength quantum cascade lasers due to its large conduction band discontinuity ͑ϳ1.5 eV͒ and compatibility with the mature GaAs fabrication process. A detailed analysis of the intersubband transition energy within the conduction band as a function of layer thickness, composition, electric field, and temperature has been carried out. Finally, an optimized combination of In 0.2 Ga 0.8 As 0.97 N 0.03 / AlAs three-coupled-well structure has been obtained. Under an applied field of 100 kV/ cm and at room temperature, a shortest wavelength of 3.4 m has been achieved by making use of this system without introducing an upper lasing level beyond the X minima of the AlAs barrier.

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1.26 μm intersubband transitions in In0.3Ga0.7As/AlAs quantum wells

Abstract: Temperature induced blue shift and broadening of intersubband absorption and photocurrent spectra in GaAs/Al 0.3 Ga 0.7 As multiple quantum wells

Cited by 23 publications

References 17 publications

Conduction intersubband transitions at normal incidence in Si_1−xGe_xquantum well devices

Conduction intersubband transitions at normal incidence in Si_1−xGe_xquantum well devices

Optical properties of potential-inserted quantum wells in the near infrared and Terahertz ranges

Design of InxGa1−xAs1−yNy∕AlAs quantum cascade structures for 3.4μm intersubband emission

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1.26 μm intersubband transitions in In0.3Ga0.7As/AlAs quantum wells

Abstract: Temperature induced blue shift and broadening of intersubband absorption and photocurrent spectra in GaAs/Al 0.3 Ga 0.7 As multiple quantum wells

Cited by 23 publications

References 17 publications

Conduction intersubband transitions at normal incidence in Si1−xGexquantum well devices

Conduction intersubband transitions at normal incidence in Si1−xGexquantum well devices

Optical properties of potential-inserted quantum wells in the near infrared and Terahertz ranges

Design of InxGa1−xAs1−yNy∕AlAs quantum cascade structures for 3.4μm intersubband emission

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Product

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Conduction intersubband transitions at normal incidence in Si_1−xGe_xquantum well devices

Conduction intersubband transitions at normal incidence in Si_1−xGe_xquantum well devices