Abstract:We report the design of an active region of In x Ga 1−x As 1−y N y / AlAs quantum cascade laser structure emitting in the near infrared wavelength range based on an eight-band k • p model. The In x Ga 1−x As 1−y N y / AlAs heterostructure system is of significant interest for the development of short wavelength quantum cascade lasers due to its large conduction band discontinuity ͑ϳ1.5 eV͒ and compatibility with the mature GaAs fabrication process. A detailed analysis of the intersubband transition energy with… Show more
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