1.25 Gbps wireless Gigabit ethernet link at 60 GHz-band

Ohata, K.; Maruhashi, K.; Ito, M.; Kishimoto, S.; Ikuina, K.; Hashiguchi, Takashi; Ikeda, K.; Takahashi, Nobuaki

doi:10.1109/rfic.2003.1213996

Cited by 83 publications

(33 citation statements)

References 7 publications

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“…Recently, various wireless communication systems for mm-wave video transmission, wireless-LANs, and wireless Ethernet applications have been constantly proposed and developed [1][2][3][4]. In order to implement these systems commercially, technologies for compact and low-cost radio systems are indispensable.…”

Section: Introductionmentioning

confidence: 99%

CPW-to-Stripline Vertical via Transitions for 60ghz LTCC Sop Applications

Lee¹

2008

PIER Letters

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Abstract-In this work, CPW-to-stripline (SL) vertical via transitions using gradually stepped vias and embedded air cavities are presented for V-band LTCC System-on-Package (SoP) applications. In order to reduce radiation loss due to abrupt via discontinuities, gradual via transitions are proposed and investigated. In addition, in order to reduce increased parasitic shunt capacitance due to stepped via structures, air cavities are embedded below the transition vias. Using a 3-D EM simulation tool, the proposed transitions are designed and analyzed, compared to the conventional transition. Three-segment transmission lines (CPW-SL-CPW) in 7-layer LTCC dielectrics were fabricated and measured. The two stepped via (STV2) transition embedding air cavities shows an insertion and return losses of 1.6 dB and below −10 dB, respectively, over 60 GHz. The transition loss per one STV2 transition is 0.7 dB at 60 GHz.

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Section: Introductionmentioning

confidence: 99%

CPW-to-Stripline Vertical via Transitions for 60ghz LTCC Sop Applications

Lee¹

2008

PIER Letters

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“…For instance, there are proposals of systems using 60 GHz [2] and development efforts on a 1.25-GHz transmission modem using ASK [3,4]. However, there are several problems such as the high price of the equipment, difficulty in installation due to the use of a highly directive antenna, and occurrence of channel shutoff due to shadowing caused by lack of diffraction and reflection.…”

Section: Introductionmentioning

confidence: 99%

Balance type pair transmission line for 60‐GHz band using multi‐layer substrate

Nakase

Oshima

Fujii

et al. 2006

Electron Comm Jpn Pt II

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SUMMARYFor a high-density multilayer substrate ALIVH, balanced pair transmission lines on which 60-GHz signals can be transmitted are proposed. First, it is shown that transmission of millimeter wave signals is difficult due to impedance mismatch of the vias in the conventional unbalanced transmission lines. Further, it is shown that transmission at up to 90 GHz is possible by a design such that the microstrip line on the surface, the strip line in the inner layer, and the vias connecting each layer have the same transmission line spacing and the same characteristic impedance.

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“…Millimetre-wave transceivers based on GaAs and InP MMICs are key components of these wideband systems [3,4]. In particular, InP-based high electron mobility transistors (HEMTs) have demonstrated the highest gain, lowest noise figure, and highest frequency capability of any three terminal transistor [5].…”

Section: Introductionmentioning

confidence: 99%

W‐band receiver module using indium phosphide and gallium arsenide MMICs

Archer

Shen

2004

Micro & Optical Tech Letters

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tuning resolution was found to be 1 pm, due to the limitation of the OSA and TLS, which exhibited the best resolution of 1 pm. The tuning repeatability was found to be 0.4% over the entire tuning range of 2 nm. The range can be improved by optimizing the package design of the carbon-fiber composite. INTRODUCTIONMillimetre-wave operation is of growing importance to the distribution of broadband telecommunication services and to wireless, local-area networks [1,2]. Millimetre-wave transceivers based on GaAs and InP MMICs are key components of these wideband systems [3,4]. In particular, InP-based high electron mobility transistors (HEMTs) have demonstrated the highest gain, lowest noise figure, and highest frequency capability of any three terminal transistor [5]. This paper describes a high-performance downconverting receiver module, based on InP and GaAs MMICs, that has been developed for point-to-point telecommunications links operating in the frequency range of 82-104 GHz. The amplifiers, designed and tested at CSIRO, were made by Northrup Grumman Space Technologies (NGST, formerly TRW) using standard 0.1-m InP HEMT [6] and 0.15-m GaAs pHEMT processes [7]. THE MMICsThe receiver chip-set comprises a pair of W-band InP amplifiers connected in cascade, with output signal connected to a subharmonically pumped image-reject mixer (SHPIRM), configured as a down-converter. The local oscillator drive to the mixer is provided by a medium-power V-band amplifier. The amplifiers were fabricated by NGST (see above), whereas the mixers were fabricated at CSIRO.The MMICs were designed using device-and circuit-modelling techniques that have yielded first-pass design success for many mm-wave ICs designed at CSIRO. Small-signal InP HEMT models were developed by TRW using carefully designed on-wafer calibration and device embedding circuits. The models have been verified and optimized to frequencies above 120 GHz, through the design and evaluation of a range of amplifier circuits [8]. In addition, standard Agilent-EESOF simulator models for the thinfilm capacitors, open-circuit stubs, Lange couplers, and the spiral IF hybrid were invalid because either the dimensions of the element, or the operating frequency, were outside the specified limits. Therefore, S-parameter matrices describing these elements were derived using electromagnetic simulator software. The four-stage W-band InP HEMT amplifier has been described in a previous paper [9]. The gain is 15.5 dB Ϯ 1.5 dB over the 82-112-GHz range. The input and output return loss is better than 10 dB over the same range. Each stage of the amplifier was biased at 1.2-V drain-supply voltage and with drain current in the range 4 -6 mA, optimized to give the best frequency response. The V-band pHEMT amplifier is also a four-stage microstrip design. The GaAs pHEMT devices have a gate length of 0.15 m and a four-finger, interdigitated geometry with a total width of 200 m. The performance of the amplifier, measured on-wafer, is shown in Figure 1. The gain is 25 dB Ϯ 2 dB over the 40 -55-GH...

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1.25 Gbps wireless Gigabit ethernet link at 60 GHz-band

Cited by 83 publications

References 7 publications

CPW-to-Stripline Vertical via Transitions for 60ghz LTCC Sop Applications

CPW-to-Stripline Vertical via Transitions for 60ghz LTCC Sop Applications

Balance type pair transmission line for 60‐GHz band using multi‐layer substrate

W‐band receiver module using indium phosphide and gallium arsenide MMICs

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