W‐band receiver module using indium phosphide and gallium arsenide MMICs

Abstract

tuning resolution was found to be 1 pm, due to the limitation of the OSA and TLS, which exhibited the best resolution of 1 pm. The tuning repeatability was found to be 0.4% over the entire tuning range of 2 nm. The range can be improved by optimizing the package design of the carbon-fiber composite. INTRODUCTIONMillimetre-wave operation is of growing importance to the distribution of broadband telecommunication services and to wireless, local-area networks [1,2]. Millimetre-wave transceivers based on GaAs and InP MMICs are key components of these wideband systems [3,4]. In particular, InP-based high electron mobility transistors (HEMTs) have demonstrated the highest gain, lowest noise figure, and highest frequency capability of any three terminal transistor [5]. This paper describes a high-performance downconverting receiver module, based on InP and GaAs MMICs, that has been developed for point-to-point telecommunications links operating in the frequency range of 82-104 GHz. The amplifiers, designed and tested at CSIRO, were made by Northrup Grumman Space Technologies (NGST, formerly TRW) using standard 0.1-m InP HEMT [6] and 0.15-m GaAs pHEMT processes [7]. THE MMICsThe receiver chip-set comprises a pair of W-band InP amplifiers connected in cascade, with output signal connected to a subharmonically pumped image-reject mixer (SHPIRM), configured as a down-converter. The local oscillator drive to the mixer is provided by a medium-power V-band amplifier. The amplifiers were fabricated by NGST (see above), whereas the mixers were fabricated at CSIRO.The MMICs were designed using device-and circuit-modelling techniques that have yielded first-pass design success for many mm-wave ICs designed at CSIRO. Small-signal InP HEMT models were developed by TRW using carefully designed on-wafer calibration and device embedding circuits. The models have been verified and optimized to frequencies above 120 GHz, through the design and evaluation of a range of amplifier circuits [8]. In addition, standard Agilent-EESOF simulator models for the thinfilm capacitors, open-circuit stubs, Lange couplers, and the spiral IF hybrid were invalid because either the dimensions of the element, or the operating frequency, were outside the specified limits. Therefore, S-parameter matrices describing these elements were derived using electromagnetic simulator software. The four-stage W-band InP HEMT amplifier has been described in a previous paper [9]. The gain is 15.5 dB Ϯ 1.5 dB over the 82-112-GHz range. The input and output return loss is better than 10 dB over the same range. Each stage of the amplifier was biased at 1.2-V drain-supply voltage and with drain current in the range 4 -6 mA, optimized to give the best frequency response. The V-band pHEMT amplifier is also a four-stage microstrip design. The GaAs pHEMT devices have a gate length of 0.15 m and a four-finger, interdigitated geometry with a total width of 200 m. The performance of the amplifier, measured on-wafer, is shown in Figure 1. The gain is 25 dB Ϯ 2 dB over the 40 -55-GH...

A 180–196 GHz image‐reject Schottky‐diode MMIC mixer

“…Figure 7 shows the conversion loss of the quadrature mixer, for the lower sideband IF output, as a function of LO frequency for three different IF frequencies (1,4, and 8 GHz)- these results were obtained by selecting the lower sideband RF frequency as required. The LO power was held constant at ϩ18.7 dBm.…”

“…Millimeter-wave transceivers based on GaAs and indium phosphide (InP) monolithic microwave integrated circuits (MMICs) are a key component of these wideband systems [4,5]. Commercial point-to-point links are now available at W-band, with data rates of up to 10 Gb/s.…”

A 176‐190 GHz transmitter module using indium phosphide and gallium arsenide MMICs

“…The GaAs pHEMT devices have a gate length of 0.15 m and a four-finger interdigitated geometry with a total width of 200 m. The detailed performance of the amplifier, measured onwafer, has been reported elsewhere [4]. The gain is 25 Ϯ 2 dB over the 40 -55-GHz range.…”

“…Millimetre-wave transceivers based on GaAs and Indium Phosphide (InP) MMICs are a key component of these wideband systems [4,5]. Commercial pointto-point links are now available at the W-band, with data rates of up to 10 Gb/s.…”

Multi-Gigabit Wireless Test Bed at Millimetre Waves

“…Its key parts are the integrated transmitter (Tx) and receiver (Rx) modules. The Tx and Rx modules were developed using a similar approach to that published earlier [15][16] but their performance was optimised for the 81-86 GHz band using a slightly different configuration of the MMICs. In addition, the sub-harmonically pumped mixers were built using GaAs pHEMT technology instead of GaAs Schottky diode technology.…”