1.2 kV Pin Diodes with SiCrystal Epiwafer

Abstract

Silicon carbide devices limitations often originate from the quality of the substrate material. Therefore it is interesting to investigate devices fabricated on alternative source materials. Currently, CREE is the world market leader of SiC wafers. Nowadays, some new companies begin to propose alternative material. The European manufacturer SiCrystal furnishes now some epiwafers for the fabrication of 1,2kV devices. In this paper we present 4H-SiC 1.2 kV pin diodes with a JTE termination realized on a SiCrystal epiwafer. The devices exhibit a blocking voltage of 1.2 kV, a current density of 420 A.cm-2 and a specific differential series resistance of 4.4 m-⋅cm2. The yield of fabricated diodes with a breakdown voltage greater 600 V is superior to 75%.

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“…Fig. 7 shows the variation of the series resistance with temperature, falling monotonically from 500 Ω at room temperature to 100 Ω at 600 K. These values are higher than those given in the literature [6,7], suggesting that the fill factor is reduced by the high series resistance and therefore, so is the overall device efficiency [3,4].…”