0.98 mu m InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW lasers for coupling high optical power into single-mode fiber

Temperature-insensitive operation of real index guided 1.06 μm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes

“…[1][2][3][4][5][6][7][8][9][10] High output power and high reliability are key issues for these pumping sources. [1][2][3][4][5][6][7][8][9][10] High output power and high reliability are key issues for these pumping sources.…”

Gas source molecular beam epitaxy growth of high quality InGaAsP for 0.98 μm Al-free InGaAs/InGaAsP/InGaP laser diodes

“…Notice that the InGaAsP barrier is designed to be tensile strained to compensate for the compressive strain in the InGaAs well. This value is reasonably good when taking the small value of the optical confinement factor for such a laser structure into account 22 and can be compared to the result, 220 A/cm 2 , of the MOCVD grown InGaAs/InGaAsP/InGaP single quantum well laser with a similar structure. In the growth, except for the GaAs cap and buffer layers grown at 580°C, all the other layers were grown at 450°C.…”

Multiple-band-edge quantum-well intermixing in the InGaAs∕InGaAsP∕InGaP material system

“…3,4 However, InGaAs/ InGaAsP / InGaP-based devices offer numerous advantages over the InGaAs/ GaAs/ AlGaAs based devices. 5,6 For instance, the InGaAsP material has a direct band gap throughout its compositional range, donor related DX centers are not as significant as in AlGaAs, and the reliability may also be improved due to the absence of dark line defects and catastrophic mirror facet damage due to oxidation. Fundamental improvements in the carrier confinement in the quantum wells have been observed in InGaAs/ InGaAsP active regions over InGaAs/ GaAs active regions, leading to increased differential efficiency and improved thermal characteristics of lasers.…”