Temperature-insensitive operation of real index guided 1.06 μm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes

Abstract

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High-performance strain-compensated InGaAs-GaAsP-GaAs (/spl lambda/=1.17 μm) quantum well diode lasers

“…Between the InGaAs QW and the tensile-strained barriers of GaAsP, 100-Å-thick GaAs transitional layers are used. Since the higher energy bandgap GaAsP layers closely surround the QW, they also enhance carrier confinement to the QW [9]. The FWHM of the PL for sample C is approximately 29 meV, slightly broadened compared to that of sample B.…”

“…The use of strain compensation reduces the effective strain of the highly lattice mismatched InGaAs QW, allowing longer wavelength emission to be achieved [7]. Previous studies have also reported the use of tensile strain barriers of GaAsP surrounding InGaAs QWs are effective in improving the carrier confinement to the QW for 0.98-m [8] and 1.06-m [9] diode lasers. Improvement of the carrier confinement in the QW will result in low-temperature sensitivity for threshold current and differential quantum efficiency.…”

Technologies and applications of Al‐free high‐power laser diodes

“…As regards new applications of high-power laser diodes, we performed joint research with the Swiss Federal Institute of Technology on mode-locked lasers pumped by laser diodes using Nd:YVO 4 . As shown in Fig.…”

Carrier lifetime in compressively strained InGaAs quantum well lasers with InGaAsP barrier/waveguide layers grown on GaAs

“…Temperature insensitive slope efficiencies up to 100 o C have been reported in 1.06µm InGaAs/GaAsP straincompensated single quantum well (SQW) lasers with InGaAsP barrier/waveguide layers lattice matched to GaAs [2], and in 0.98µm and 1.02µm InGaAs strained double quantum well (DQW) lasers with GaAs barrier/waveguide layers with high power >300mW [3,4]. The internal radiative quantum efficiency is estimated to be almost unity above threshold in both types of lasers.…”

“…The threshold carrier densities are (1.2~1. 5 3 Carrier recombination lifetimes The slope efficiency for lasers with InGaAsP barrier/waveguide is 0.4A/W from the cleaved front facet with a reflectivity of 0.32 [2], and for the lasers with GaAs barrier/waveguide a value of 0.8-1.0A/W from antireflective coated front facet with a reflectivity of 0.04 [3] has been obtained. These results imply that the internal radiative quantum efficiency above threshold is almost unity, as calculated for internal losses in the 3-12 cm -1 regime.…”