Carrier lifetime in compressively strained InGaAs quantum well lasers with InGaAsP barrier/waveguide layers grown on GaAs

Abstract

The carrier lifetime in In x Ga 1-x As (x = 0.2, 0.25, 0.3) quantum well lasers with InGaAsP (E g = 1.55, 1.59 eV) barrier/waveguide layers is longer than that in In x Ga 1-x As (x = 0.14, 0.18, 0.31) quantum well lasers with GaAs (E g = 1.42 eV) barrier/waveguide layers. The longer lifetime for the wider bandgap InGaAsP barrier/waveguide layers is due to the higher injection ratio into the first heavy hole subband by the larger energy separation between the hole subbands.

Influence of band offsets on carrier overflow and recombination lifetime in quantum well lasers grown on GaAs and InP

“…The lifetime r;. has been determined from the rate equation analysis using lasing delay time to rectangular current pulse current I p with bias current I b below threshold current It, as described in [1 ], [2].…”

Determination of Band Offset for a 660 nm-Ga[sub 0.4]In[sub 0.6]P∕(Al[sub 0.5]Ga[sub 0.5])[sub 0.5]In[sub 0.5]P Quantum Well Laser by Photoreflectance Using a 410 nm InGaN Laser

“…Heterojunction band discontinuities or band offsets play a key role to confine injected carriers for quantum well (QW) lasers with low threshold and high efficiency [1] . We have determined the band offsets and subband levels in QW layer for a 660nm-Ga 0.…”

“…C o n d u c t i o n b a n d o f f s e t r a t i o f o r GaInP/AlGaInP is to be ~0.65, which are mainly determined by photoluminescence (PL) and PL excitation (PLE) [1] or by PL under high pressure [2], at liquid helium temperature.…”

Determination of band offsets and subband levels for a GaInP/AlGaInP quantum well by photoreflectance using a InGaP laser diode

“…1 Introduction Band offsets play a key role in quantum well (QW) lasers to attain low threshold and high efficiency [1]. There are many reports to determine the band offsets such as in GaAs/AlGaAs heterojunctions and QWs by photoreflectance (PR) spectroscopy, but there are no reports for those of GaInP/AlGaInP as far as we know.…”