Determination of band offsets and subband levels for a GaInP/AlGaInP quantum well by photoreflectance using a InGaP laser diode

Temperature of a commercial AlGaInP/GaInP quantum well laser diode (LD) is measured using two methods: peak wavelength shift and the diode voltage drop caused by working current. Time evolutions of temperature obtained by the two methods during the LD self-heating are measured and compared. No significant difference between the thus obtained temperature evolutions is obtained. Correlation between the LD voltage drop and the laser radiation frequency is established using a simple four-level semiconductor laser scheme and the LD gap energy is estimated. The LD gap energy decreases from 1.66 eV to 1.56 eV for temperature increase of 21 K, at close to room temperature. It is found that LD's frequency decrease is caused by the gap energy decrease.

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Correlation between measured voltage and observed wavelength in commercial AlGaInP laser diode

Iskrenović

Krstić

Obradović

et al. 2014

Journal of Applied Physics

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Temperature window of the (Al0.1Ga0.9)0.5In0.5P growth by MOCVD

孙沛¹,

李建军²,

Deng³

et al. 2013

Acta Phys. Sin.

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The (Al0.1Ga0.9)0.5In0.5P, four-element alloy, whose band is direct, is used to make optoelectronic devices. The wavelength of the material is about 630nm. When it is epitaxially grown by low press-metalorganic chemical vapor deposition(LP-MOCVD), its quality will depend on temperature, one of the most important conditions. So it is essential to find out the best temperature of growth. The quantum wells of the (Al0.1Ga0.9)0.5In0.5P are grown at 700 ℃, 680 ℃, 670 ℃ and 660 ℃ respectively. The best temperature, which is found out by the results of photoluminescence PL, is about 670 ℃. The reasons are given by the results of PL, surfaces of wafers and the flow field simulation of MOCVD. The revaporization of In at high temperature and the incorporation of O at low temperature can lead to bad quality. An available path to solve growth at high temperature is to increase the effective density of In.

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Determination of band offsets and subband levels for a GaInP/AlGaInP quantum well by photoreflectance using a InGaP laser diode

Cited by 2 publications

References 7 publications

Correlation between measured voltage and observed wavelength in commercial AlGaInP laser diode

Correlation between measured voltage and observed wavelength in commercial AlGaInP laser diode

Temperature window of the (Al0.1Ga0.9)0.5In0.5P growth by MOCVD

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