Gas source molecular beam epitaxy growth of high quality InGaAsP for 0.98 μm Al-free InGaAs/InGaAsP/InGaP laser diodes

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Gas source molecular beam epitaxy growth of high quality InGaAsP for 0.98 μm Al-free InGaAs/InGaAsP/InGaP laser diodes

Abstract: Articles you may be interested inGrowth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy

Cited by 1 publication

References 18 publications

High-quality InGaAsP grown on GaAs by solid source molecular beam epitaxy with a GaP decomposition Source

High-quality InGaAsP grown on GaAs by solid source molecular beam epitaxy with a GaP decomposition Source

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