0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

Mikhrin, S. S.; Zhukov, A. E.; Kovsh, A. R.; Maleev, N. A.; Ustinov, V. M.; Shernyakov, Yu. M.; Soshnikov, I. P.; Livshits, D.A.; Tarasov, I. S.; Bedarev, D. A.; Volovik, B. V.; Maximov, M. V.; Tsatsul’nikov, A. F.; Ledentsov, N. N.; Kop’ev, P. S.; Bimberg, D.; Alfërov, Zh. I.

doi:10.1088/0268-1242/15/11/309

Cited by 87 publications

(37 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…[5][6][7][8][9] High-power lasers with the stacked SML InAs/GaAs QDs as the active region have recently been demonstrated. [6][7][8] The structure and optical properties of the SK InAs/GaAs QDs have been intensively studied, 1 but few papers have been reporting on the vertically correlated ͑VC͒ SML InAs/GaAs QDs. 4,9 In this letter, the structure and the optical anisotropy of the VCSML InGaAs QDs are investigated by plan-view transmission electron microscopy ͑TEM͒, high-resolution x-ray diffraction ͑HRXRD͒, and polarization-dependent photoluminescence ͑PL͒ at low temperature in both the backscattering and the edge emission geometries.…”

mentioning

confidence: 99%

“…2. According to the growth mechanism of stacked SML InGaAs QD heterostructure, 7 the VCSML QD in our sample can be described as 10 cycles of GaAs͑2ML͒/InAs͑1ML͒, while the lateral non-QD part can be described as a 30 ML GaAs and 50% of the surface should be covered by the VCSML QDs. However, QDs only fill about 10% of the surface in the planview TEM image ͑Fig.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

Birkedal

Hvam

et al. 2003

Applied Physics Letters

View full text Add to dashboard Cite

A vertically correlated submonolayer (VCSML) InAs/GaAs quantum-dot (QD) heterostructure was studied using transmission electron microscopy, high-resolution x-ray diffraction (HRXRD) and polarization-dependent photoluminescence. The HRXRD (004) rocking curve was simulated using the Tagaki–Taupin equations. Excellent agreement between the experimental curve and the simulation is achieved assuming that indium-rich VCSML QDs are embedded in a quantum well (QW) with lower indium content and an observed QD coverage of 10%. In the VCSML QDs, the vertical lattice mismatch of the InAs monolayer with respect to GaAs is around 1.4%, while the lattice mismatch in the QW is negligible. The photoluminescence is transverse magnetic—polarized in the edge geometry.

show abstract

mentioning

confidence: 99%

mentioning

confidence: 99%

Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

Birkedal

Hvam

et al. 2003

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…First and foremost, a proof-ofprinciple that QDs are viable gain elements for SDLs was needed. Investigations started with a target emission of ∼ 1 μm, a wavelength where proven high-performance operation of edge emitters and VCSELs had already been achieved [81][82][83]. The constraints imposed here are marginally different from the ones associated with the design of QW-based SDLs.…”

Section: Nm-1100 Nm Sdlsmentioning

confidence: 99%

“…18), were deemed the most promising since they offer a large ground-state gain and they can be grown with good size uniformity at high densities (∼ 10 11 /cm 2 ) with a minimum stacking distance of 20 nm [82,83]. Their true 3-dimensional confinement should also provide easy population inversion and good thermal immunity.…”

Section: Nm-1100 Nm Sdlsmentioning

confidence: 99%

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

154

View full text Add to dashboard Cite

Recent developments in semiconductor disk lasers (SDLs) generating visible or ultraviolet light are reviewed. After an introduction on potential applications, we discuss how the combination of vertical-emitting semiconductor GaAs-based structures and intra-cavity nonlinear conversion techniques can be successfully exploited to uniquely meet demands for continuous-wave radiation in the visible and ultraviolet spectral range. To do so, an overview of the device operating principles and performance is presented highlighting the underlying material considerations, semiconductor structural designs, thermal management techniques and suitable cavity configurations. This summary is completed by a presentation of new developments in the field, with a particular focus on the trends towards miniaturization.Green-pumped direct-red-emitting Semiconductor Disk Laser.

show abstract

“…In the first generation of 980 nm VCSELs presented in this work one of the main optimization was the use of the active region grown in the submonolayer growth mode [127] - [131]. Depending on the growth conditions, active layers with carrier confinement centers caused by the composition and thickness variations can be fabricated [132].…”

Section: Vcsels With the Sml Active Regionmentioning

confidence: 99%

High Speed VCSELs for Optical Interconnects

Mutig

2011

Springer Theses

View full text Add to dashboard Cite

The forecast for the serial transmission speeds used for data communication s ystems is a continued exponential increase with time, directly in concert with silicon integrated circuit scaling and in response to human society's perpetual hunger for massive increases in bandwidth. Electrical interfaces for single channel bit rates beyond 10 Gbit/s are being standardized for a variety of applications, including for example (with an expected data -rate): Fibre Channel FC32G (34 Gbit/s), InfiniBand (20 Gbit/s), common electrical interface CEI (25-28 Gbit/s), and universal serial bus protocols USB 3.0 (up to 25 Gbit/s). As a result, the fundamental electro-magnetic limitations of copper wire-based links at bit rates >10 Gbit/s make fiber based optics for data communication indispensable at distances >1 m. At shorter distances, problems associated with electrical transmission lines at such high frequencies, e. g. high power consumption, strong signal attenuation, signal distortion and electromagnetic interference, lead to unstoppable and progressive penetration of optical communication links into traditional copper interconnect markets. These trends greatly expand the applications of vertical cavity surface emitting lasers (VCSELs) and VCSEL arrays as very inexpensive, efficient, reliable, readily manufacturable and compact laser light sources for next-generations of fiber-optic, free-space, board-to-board, module-to-module, chip-to-chip and on-chip interconnects and related information systems and networks.Already today oxide-confined GaAs-based VCSELs emitting at 850 nm are the key components for low cost high speed local and storage area network (LAN/SAN) data communication systems. Furthermore, active optical cable links for short-reach computer and consumer applications, for example USB, DisplayPort, and HDMI standards, are increasingly based on VCSELs operating in the near-infrared spectral range. Immense research and development effort all around the world resulted in the great progress in the area of highspeed GaAs-based VCSELs in the last few years. At the standard wavelength of 850 nm room temperature error free data transmission at the bit rate of 32 Gbit/s has been demonstrated in 2009. Also at longer wavelengths bit rates of 35 Gbit/s (980 nm) and 40 Gbit/s (1100 nm) have been achieved at room temperature using GaAs-based VCSELs, while the latter device was based on the buried tunnel junction, requiring additional epitaxial growth step and making the laser fabrication more complicated. While the wavelength of 850 nm is the current standard for LAN/SAN applications, potential competitive standards at 980 and 1100 nm have many critical advantages for very and ultra short reach systems. This includes smaller operational voltages due to the lower photon energy, which are decisive for complementary metal oxide semiconductor (CMOS) drivers, transparency of the GaAs substrate, which is important for bottom-emitting lasers, and deeper potential wells, suppressing the escape of injected non-equilibrium carr...

show abstract

0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

Cited by 87 publications

References 11 publications

Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

High Speed VCSELs for Optical Interconnects

Contact Info

Product

Resources

About