Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

Xu, Zuyan; Birkedal, D.; Hvam, Jørn Märcher; Zhao, Zhibing; Liu, Yanmei; Yang, Kuntang; Kanjilal, A.; Sadowski, J.

doi:10.1063/1.1581005

Cited by 63 publications

(38 citation statements)

References 18 publications

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“…SML QDs can be realized in a variety of insert/host matrix semiconductors [8,9]. The lateral dimensions of SML QDs can be quite small (5-10 nm), and the dot areal density can be quite high [5,8]. By controlling the inter-layer spacer thickness, multiple SML QD layers can be stacked with vertical alignment [10], yielding device design flexibility.…”

Section: Submonolayer Quantum Dot Infrared Photodetectormentioning

confidence: 99%

“…In particular, the InAs/GaAs submonolayer (SML) QD system is well-characterized [5], and is used in vertical cavity surface-emitting lasers (VCSELs) [6] and disk lasers [7]. The use of SML QDs instead of S-K QDs has the advantage that, whereas typically 2-3 monolayers of InAs is needed for a single layer of S-K QD formation, only 1/3-1/2 monolayer is needed for SML QD.…”

Section: Submonolayer Quantum Dot Infrared Photodetectormentioning

confidence: 99%

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Dots, QWISPs, and BIRDs

Ting

Bandara

Mumolo

et al. 2009

Infrared Physics & Technology

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Section: Submonolayer Quantum Dot Infrared Photodetectormentioning

confidence: 99%

Section: Submonolayer Quantum Dot Infrared Photodetectormentioning

confidence: 99%

Dots, QWISPs, and BIRDs

Ting

Bandara

Mumolo

et al. 2009

Infrared Physics & Technology

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“…Structural investigations and optical characterization of MBE-grown InGaAs/GaAs SMLs describe the fabricated structures as a mixed state of QDs enclosed within a QW showing distinct QD properties, which are overlapped by the stronger QW luminescence at higher excitation levels [Xu03a,Xu03b].…”

Section: Sub-monolayer Structuresmentioning

confidence: 99%

Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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ZusammenfassungHalbleiterlaser stellen die Grundlage für eine zunehmende Vielzahl von Anwendungen dar, die von der Informationsspeicherung und digitalen Kommunikation bis hin zur Materialbearbeitung reichen. Neuartige Konzepte überwinden bisherige Limitierungen und erschließen neue Anwendungsgebiete. Viele dieser Anwendungsgebiete verlangen nach kostengünstigen Bauelementen, die maximale Brillanz und hohe Ausgangsleistungen oder höchste Geschwindigkeiten erreichen.Diese Arbeit stellt dar, wie essentielle Leistungsmerkmale von Halbleiterlasern durch das Design von Nanostrukturen und epitaktischen Wachstumsprozessen maßgeschneidert werden können. Hierbei wird auf alle Schritte der Laserherstellung eingegangen, vom Design über das Wachstum der Nanostrukturen mittels metallorganischer Gasphasenepitaxie (MOVPE), bis hin zur Herstellung und Charakterisierung kompletter Bauelemente. AbstractSemiconductor lasers represent the backbone for an increasing variety of applications ranging from information storage and communication, to material treatment. Novel concepts are pushing the limits and are enabling new application areas. Many of these areas demand low-cost laser devices with high-brilliance and high-power light output or high-speed performance.This thesis demonstrates how key performance characteristics of semiconductor lasers can be tailored using nanostructure design and epitaxial growth. All aspects of laser fabrication are discussed, from design to growth of nanostructures using metal-organic vapor-phase epitaxy (MOVPE), to fabrication and characterization of complete devices. By employing industrial tools, all developed processes are compatible with mass production.Pulsed high power laser operation up to 8 W and a ultra-low lasing threshold of 66 A/cm 2 is achieved with electrically pumped quantum dots (QD)-based edge emitters at 1.25 µm due to an improved understanding of the QD growth process. This novel process enables 1.3 µm edge emitters for telecom applications in the established InGaAs/GaAs system. At the heart of these achievements is the careful investigation and optimization of nearly all layers of the laser device structure. Designs are altered and precisely tuned by employing AlGaAs or InGaP claddings and varied doping schemes in order to develop new waveguides to meet different requirements.High-power vertical external-cavity surface-emitting lasers (VECSELs) promise continuous-wave (CW) lasing with perfect circular beam quality, plus direct access to the cavity. While the concept is ideal for a multitude of applications, conventional quantumwell based systems exhibit problematic temperature sensitivity during operation. Here, for the first time, VECSELs with sub-monolayer structures and QDs as active layers are realized by MOVPE. These optically pumped devices cover a wide spectral range from 950 nm to 1210 nm, and achieve excellent temperature-stable CW lasing due to the use of QDs and CW output powers of up to 1.4 W.In order to overcome the physical limitations of directly modulated vertical-c...

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“…The broad peak from 1.334 to 1.352 eV is due to the lateral quantum well ͑QW͒ states. 10,12 The third broad peak located at 1.43 eV is ascribed to the doped GaAs barrier. Assuming the conduction ͑valence͒ bandoffset to be 60 ͑40%͒ of the bandgap offset between the QDs and the lateral QW, the conduction bandoffset will be 34.8 meV.…”

mentioning

confidence: 99%

Short exciton radiative lifetime in submonolayer InGaAs∕GaAs quantum dots

Zhang

Tackeuchi

et al. 2008

Applied Physics Letters

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The exciton radiative lifetime in submonolayer (SML) InGaAs∕GaAs quantum dots (QDs) grown at 500°C was measured by using time-resolved photoluminescence from 10to260K. The radiative lifetime is around 90ps and is independent of temperature below 50K. The observed short radiative lifetime is a key reason for the high performance of SML QD devices and can be explained by the theory of Andreani et al. [Phys. Rev. B 60, 13276 (1999)] calculating the radiative lifetime of QDs formed at the interface fluctuations of a quantum well, as the SML QDs are 20–30nm in diameter and embedded within the lateral InGaAs QW.

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Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

Cited by 63 publications

References 18 publications

Dots, QWISPs, and BIRDs

Dots, QWISPs, and BIRDs

Design and Realization of Novel GaAs Based Laser Concepts

Short exciton radiative lifetime in submonolayer InGaAs∕GaAs quantum dots

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