0.25 µm Electron Beam Direct Writing Techniques for 256 Mbit  Dynamic Random Access Memory Fabrication

Nakajima, Ken; Kojima, Yoshinori; Hirasawa, S.; Mukai, Hiroshi; Ishida, Shinji; Hirota, Takao; Kondoh, Kazumasa; Aizaki, Naoaki

doi:10.1143/jjap.32.6023

Cited by 5 publications

(2 citation statements)

References 9 publications

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“…Electron beam (EB) lithography is a key technology, which is required for advanced device fabrication [1] [2]. Recently, to increase the writing throughput, the technique of EB projection lithography (EPL), such as the EB stepper [3] [4] and the SCALPEL [5], have been proposed (100kV acceleration voltage and 20-30µA total currents) for mass-production of sub-0.1µm ULSIs.…”

Section: Introductionmentioning

confidence: 99%

<title>Development of data conversion system for electron-beam projection lithography (EPL) mask</title>

et al. 2001

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Electron beam (EB) lithography has long been used for fabricating advanced ULSIs. Recently, to increase the writing throughput, electron beam projection lithography (EPL) technology has been proposed (100kV acceleration voltage and 20-30µA total currents). When we implement this technology to mass production, the data conversion system and EPL mask, which is different from conventional optical mask, have to be developed.In EPL mask conversion system, it is necessary to divide a full chip data into 1mmb1mm (250um b 250um on the wafer) sub-fields, which size is as same as the EPL shot size with format conversion.In this paper, we show the data conversion system that converts pattern data (GDS ) to EPL mask data.This system can maintain the hierarchy data structure in the dividing process to sub-fields. The patterns that located on the boundary between neighboring sub-fields will be treated as belonging in either field for the prevention of critical division. We have developed a data conversion system for EPL mask that can divide the device data with high speed and high quality.

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Section: Introductionmentioning

confidence: 99%

<title>Development of data conversion system for electron-beam projection lithography (EPL) mask</title>

et al. 2001

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“…Electron beam (EB) direct writing lithography is a key technology which is required for advanced device fabrication [1] [2]. When EB direct writing is used for a fine pattern fabrication on the deep sub-micron level, however, three technical elements : EB direct writing system technology, resist process technology, and pattern data preparation (conversion) technology, must be improved and optimized.…”

Section: Introductionmentioning

confidence: 99%

One-dimensional calculation method for proximity effect correction in cell projection electron-beam direct writing

et al. 1997

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Electron beam (EB) direct writing has often been used for advanced device development because the dimensions of the pattern required for advanced device fabrication are below the maximum resolution of applicable optical lithography. Recently, EB direct writing has been put practical use in advanced device production using the cell projection (CP) method, which drastically increases the writing throughput of an EB direct writing system. When CP EB direct writing is used to produce advanced DRAM, however the handling of a large volume of data becomes an important issue. A data preparation system with simple proximity effect correction, which is suitable for the CP method, is therefore required for the reduction of the data preparation time (conversion time). We therefore propose the improved proximity effect correction, which is based on the self-consistent method, using a one dimensional calculation method for CP direct writing. This method can drastically reduce the exposure intensity calculation time because the calculation of a linear integral can be substituted for that of a surface integral. The conversion time to fabricate a O.15j.tm Gbit DRAM (lO.3x iø rectangle patterns) with a CD accuracy within was reduced to be only 10% of original elapsed time. (in conventional 2-D correction method).

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Improved 0.12 μm EB direct writing for Gbit DRAM fabrication

Nakajima

Yamashita²,

Kojima³

et al.

1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216)

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0.25 µm Electron Beam Direct Writing Techniques for 256 Mbit Dynamic Random Access Memory Fabrication

Cited by 5 publications

References 9 publications

<title>Development of data conversion system for electron-beam projection lithography (EPL) mask</title>

<title>Development of data conversion system for electron-beam projection lithography (EPL) mask</title>

One-dimensional calculation method for proximity effect correction in cell projection electron-beam direct writing

Improved 0.12 μm EB direct writing for Gbit DRAM fabrication

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