IEEE Trans. Electron Devices
 1998
DOI: 10.1109/16.678505
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0.1-μm p/sup +/-GaAs gate HJFET's fabricated using two-step dry-etching and selective MOMBE growth techniques

S. Wada
1
,
Naoki Furuhata2,
Masatoshi Tokushima3
et al.
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