Enhancement-mode power heterojunction FET utilizing Al/sub 0.5/Ga/sub 0.5/As barrier layer with negligible operation gate current for digital cellular phones

Bito, Y.; Kato, Takumi; Iwata, N.

doi:10.1109/16.936498

Cited by 5 publications

(1 citation statement)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Lattice-matched high electron mobility transistors ͑HEMTs͒ fabricated from GaAs-based materials are well established as microwave circuit elements. 5,6 Several reports have been written on the output characteristics of AlGaAs/InGaAs/GaAs [7][8][9][10] and InGaP/InGaAs/GaAs [11][12][13][14][15][16][17] pseudomorphic HEMT ͑pHEMTs͒ during the last decade. AlGaAs/InGaAs/GaAs pHEMTs have been intensively studied as high-frequency and high-speed devices, and they outperform AlGaAs/GaAs HEMTs.…”

mentioning

confidence: 99%

Performance of AlGaAs∕InGaAs∕GaAs Pseudomorphic High Electron Mobility Transistor as a Function of Temperature

Lin

Chen

2007

J. Electrochem. Soc.

View full text Add to dashboard Cite

An AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor ͑pHEMT͒ with double ␦-doping carrier supply layers was fabricated and characterized. Estimates of typical device characteristics ͑extrinsic transconductance ͑g m ͒, drain current density ͑I D ͒, threshold voltage ͑V th ͒, current gain cut-off frequency ͑ f T ͒, maximum frequency of oscillation ͑ f max ͒, noise behavior, and large signal measurements͒ were made. A series of experiments was conducted to assess the effects of temperature on pHEMT. A peak g m of 161 mS/mm was obtained from the fabricated pHEMT with a gate length of 1 m for room-temperature operation. The transistor characteristics showed evidence of high breakdown voltages. With respect to the variation in two-terminal gatedrain breakdown voltage, this device had a positive temperature coefficient from 300 to 450 K, and a negative temperature coefficient at temperatures surpassing 450 K. Strikingly, high-frequency on-wafer measurements on the fabricated pHEMT were made up to 400 K, revealing nearly no change in f T . Not only was the device characterized and the complicated mechanisms at various temperatures elucidated, but also the favorable potential of the presented pHEMT for high-temperature and high-frequency applications was determined.

show abstract

mentioning

confidence: 99%

Performance of AlGaAs∕InGaAs∕GaAs Pseudomorphic High Electron Mobility Transistor as a Function of Temperature

Lin

Chen

2007

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

Low standby leakage current power amplifier module made with junction PHEMT technology

Saka¹,

Nakamura²,

Shimada³

et al. 2003

25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003.

View full text Add to dashboard Cite

2 V-operated InGaP-AlGaAs-InGaAs enhancement-mode pseudomorphic HEMT

Chu

Chang

Chen

et al. 2005

IEEE Electron Device Lett.

View full text Add to dashboard Cite

A low-voltage single power supply enhancement-mode InGaP-AlGaAs-InGaAs pseudomorphic high-electron mobility transistor (PHEMT) is reported for the first time. The fabricated 0.5 160 m 2 device shows low knee voltage of 0.3 V, drain-source current ( DS ) of 375 mA/mm and maximum transconductance of 550 mS/mm when drain-source voltage ( DS ) was 2.5 V. High-frequency performance was also achieved; the cut-off frequency( ) is 60 GHz and maximum oscillation frequency( max ) is 128 GHz. The noise figure of the 160-m gate width device at 17 GHz was measured to be 1.02 dB with 10.12 dB associated gain. The E-mode InGaP-AlGaAs-InGaAs PHEMT exhibits a high output power density of 453 mW/mm with a high linear gain of 30.5 dB at 2.4 GHz. The E-mode PHEMT can also achieve a high maximum power added efficiency (PAE) of 70%, when tuned for maximum PAE.

show abstract

Enhancement-mode power heterojunction FET utilizing Al/sub 0.5/Ga/sub 0.5/As barrier layer with negligible operation gate current for digital cellular phones

Cited by 5 publications

References 11 publications

Performance of AlGaAs∕InGaAs∕GaAs Pseudomorphic High Electron Mobility Transistor as a Function of Temperature

Performance of AlGaAs∕InGaAs∕GaAs Pseudomorphic High Electron Mobility Transistor as a Function of Temperature

Low standby leakage current power amplifier module made with junction PHEMT technology

2 V-operated InGaP-AlGaAs-InGaAs enhancement-mode pseudomorphic HEMT

Contact Info

Product

Resources

About