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A low-voltage single power supply enhancement-mode InGaP-AlGaAs-InGaAs pseudomorphic high-electron mobility transistor (PHEMT) is reported for the first time. The fabricated 0.5 160 m 2 device shows low knee voltage of 0.3 V, drain-source current ( DS ) of 375 mA/mm and maximum transconductance of 550 mS/mm when drain-source voltage ( DS ) was 2.5 V. High-frequency performance was also achieved; the cut-off frequency( ) is 60 GHz and maximum oscillation frequency( max ) is 128 GHz. The noise figure of the 160-m gate width device at 17 GHz was measured to be 1.02 dB with 10.12 dB associated gain. The E-mode InGaP-AlGaAs-InGaAs PHEMT exhibits a high output power density of 453 mW/mm with a high linear gain of 30.5 dB at 2.4 GHz. The E-mode PHEMT can also achieve a high maximum power added efficiency (PAE) of 70%, when tuned for maximum PAE.

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A low noise pseudomorphic high electron mobility transistor (PHEMT) with copper airbridges using sputtered WNx as the diffusion barrier has been developed. Both the material system and the copper airbridged PHEMT with WNx as the diffusion barrier did not decay even after thermal annealing at 250 C for 20 h. The results show that the copper airbridges with WNx diffusion barrier can be used as the interconnects for low noise GaAs PHEMTs.

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