An 0.1-μm voidless double-deck-shaped (DDS) gate HJFET with reduced gate-fringing-capacitance

Wada, S.; Yamazaki, J.; Ishikawa, M.; Maeda, Tadashi

doi:10.1109/16.760390

Cited by 6 publications

(1 citation statement)

References 9 publications

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“…In essence, this is a triple-recess process that results in an InAlAs barrier layer thickness t ins of about 4 nm. The T-shaped gate with a Ti/Pt/Au (20/20/350 nm) metal stack is fabricated through a SiO 2 -assisted process with a stem height of 150 nm to minimize parasitic capacitance [3], [8]. The device has a T-type gate layout.…”

Section: Process Technologymentioning

confidence: 99%

30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$

Kim

Alamo

2010

IEEE Electron Device Lett.

133

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We present 30-nm InAs pseudomorphic HEMTs (PHEMTs) on an InP substrate with record f T characteristics and well-balanced f T and f max values. This result was obtained by improving short-channel effects through widening of the siderecess spacing (L side ) to 150 nm, as well as reducing parasitic source and drain resistances. To compensate for an increase in R s and R d due to L side widening, we optimized the ohmic contact process so as to decrease the specific ohmic contact resistance (R c ) to the InGaAs cap to 0.01 Ω · mm. A 30-nm InAs PHEMT with t ins = 4 nm exhibits excellent g m,max of 1.9 S/mm, f T of 644 GHz, and f max of 681 GHz at V DS = 0.5 V simultaneously. To the knowledge of the authors, the obtained f T in this work is the highest ever reported in any FET on any material system. This is also the first demonstration of simultaneous f T and f max higher than 640 GHz in any transistor technology.

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Section: Process Technologymentioning

confidence: 99%

30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$

Kim

Alamo

2010

IEEE Electron Device Lett.

133

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Scaling and carrier transport behavior of buried-channel In0.7Ga0.3As MOSFETs with Al2O3 insulator

Kim¹,

Kim²

2015

Solid-State Electronics

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Gigahertz and terahertz transistors for 5G, 6G, and beyond mobile communication systems

Liou,

Ziegler,

Schwierz

2024

Applied Physics Reviews

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Mankind is currently living in the era of mobile communication. Mobile communication encompasses almost all areas of our daily life and is heavily used in most sectors of economy, including agriculture, healthcare, education, and so on. With mobile devices such as smart phones, people can connect to any other people somewhere on the earth, can access huge databases via the internet, stream videos and movies, to name just a few of the many mobile services that are routinely used in the early 2020s. Artificial intelligence, virtual reality, and other emerging new applications will further boost the importance of mobile communication. It is a general trend that with progressing evolution of mobile communication, the amount of data to be transmitted wirelessly increases rapidly and continuously. To enable this, a suitable well-performing hardware infrastructure is needed. The hardware used so far in the successively introduced generations of systems for mobile communication is essentially based on fast transistors. We designate these transistors as gigahertz (GHz)–terahertz (THz) transistors, as the high data rates to be transferred require an electronic hardware operating properly at frequencies in the GHz–THz range. The present paper provides a comprehensive in-depth discussion of these transistors. After a short survey of the evolution of mobile communication systems, the different categories and classes of GHz–THz transistors are introduced, relevant transistor performance measures called figures of merit are defined, issues of transistor design are dealt with, and general design rules for GHz–THz transistors are established. This is followed by a tour through the evolution of these transistors, starting in the 1950s, when the first transistors with GHz capabilities were demonstrated, up to the latest developments since the turn of the millennium and to the state-of-the-art in mid-2024. The discussion includes evolutionary advances as well as true breakthroughs, both contributing to the significant performance improvements achieved over the years. Furthermore, some research activities on GHz–THz transistors, which, unfortunately, led to a dead end as well as ongoing efforts with still unclear outcome are presented and the approaching limits of transistor performance are critically examined. Finally, we take a short view on alternative hardware options for mobile communication systems beyond the limits of transistors.

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An 0.1-μm voidless double-deck-shaped (DDS) gate HJFET with reduced gate-fringing-capacitance

Cited by 6 publications

References 9 publications

30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$

30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$

Scaling and carrier transport behavior of buried-channel In0.7Ga0.3As MOSFETs with Al2O3 insulator

Gigahertz and terahertz transistors for 5G, 6G, and beyond mobile communication systems

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