0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers

Nihei, Misato; Hara, Naoki; Suehiro, Haruyoshi; Kuroda, S.

doi:10.1016/s0038-1101(97)00118-4

Cited by 6 publications

(3 citation statements)

References 5 publications

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“…The potential advantages of this material for low-noise and high-power device applications arise from the combination of InGaP's large bandgap and lack of deep-level trapping states. Although high-speed operation for deep submicron gate length InGaP/InGaAs pHEMT's has been reported [1], [2], the scaling of this performance with gate length has not been reported in detail. In this letter, experimental performance results for InGaP-barrier pHEMT's with gate lengths ranging from 1.0 to 0.2 m are presented, and the scaling trends are examined.…”

Section: Introductionmentioning

confidence: 99%

Gate length scaling in high performance InGaP/InGaAs/GaAs pHEMTs

Fay

Stevens

Elliot

et al. 2000

IEEE Electron Device Lett.

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The performance of InGaP-based pHEMT's as a function of gate length has been examined experimentally. The direct-current and microwave performance of pHEMT's with gate lengths ranging from 1.0-0.2 m has been evaluated. Extrinsic transconductances from 341 mS/mm for 1.0 m gate lengths to 456 mS/mm for 0.5 m gate lengths were obtained. High-speed device operation has been verified, with of 93 GHz and max of 130 GHz for 0.2 m gate lengths. The dependence of dc and small-signal device parameters on gate length has been examined, and scaling effects in InGaP-based pHEMT's are examined and compared to those for AlGaAs/InGaAs/GaAs pHEMT's. High-field transport in InGaP/InGaAs heterostructures is found to be similar to that of AlGaAs/InGaAs heterostructures. The lower of InGaP relative to AlGaAs is shown to be responsible for the early onset of short-channel effects in InGaP-based devices.Index Terms-GaInP, InGaP, modulation-doped field-effect transistor (MODFET), pseudomorphic high electron mobility transistor (PHEMT).

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Section: Introductionmentioning

confidence: 99%

Gate length scaling in high performance InGaP/InGaAs/GaAs pHEMTs

Fay

Stevens

Elliot

et al. 2000

IEEE Electron Device Lett.

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“…Although InGaP-based pHEMT's have exhibited good electrical performance [1]- [5], little published work regarding the effects of the choice of gate metallization exists. In this letter, the performance of 0.7-m gate length pHEMT's using Mo/Au, Ti/Au, and Pt/Au gate metals is examined, and the Schottky barrier properties of each of these metallizations on InGaP-based pHEMT heterostructures is evaluated.…”

mentioning

confidence: 99%

Performance dependence of InGaP/InGaAs/GaAs pHEMTs on gate metallization

Fay

Stevens

Elliot

et al. 1999

IEEE Electron Device Lett.

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The performance of InGaP-based pHEMT's as a function of gate metallization is examined for Mo/Au, Ti/Au, and Pt/Au gates. DC and microwave performance of pHEMT's with 0.7-m gate lengths is evaluated. Transconductance, threshold voltage, f t f t f t , and f max f max f max are found to depend strongly on gate metallization. High-speed performance is achieved, with f t f t f t of 41.3 GHz and f max f max f max of 101 GHz using Mo/Au gates. The difference in performance between devices with different gate metallizations is postulated to be due to a combination of the difference in Schottky barrier heights and different gate-to-channel spacings due to penetration of the gate metal into the InGaP barrier layer.

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“…5 In 0.5 P heterostructure is lattice matched to GaAs, making it useful as a replacement for AlGaAs/GaAs in high electron mobility transistors, heterojunction bipolar transistors, and visible light emitting diodes and lasers. [1][2][3][4][5][6][7][8][9][10] In developing device fabrication processes it is necessary to have wet and dry etches that are highly selective for one material over another. For the InGaP/GaAs and AlInP/GaAs systems, Lothian et al 11,12 reported such recipes previously.…”

mentioning

confidence: 99%

High Selectivity Dry Etching of InGaP Over AlInP in BI[sub 3] and BBr[sub 3] Plasma Chemistries

Hong

Cho

Maeda

et al. 1999

Electrochem. Solid-State Lett.

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High selectivities (>20) for dry etching of In 0.49 Ga 0.51 P over Al 0.5 In 0.5 P are found over a wide range of conditions in inductively coupled plasmas using BI 3 and BBr 3 . The etch stop mechanism appears to be the formation of relatively involatile AlI x and AlBr x species. Selectivities of ≥8 for InGaP over common mask materials SiO 2 and SiN x are obtained with both chemistries. © 1998 The Electrochemical Society, Inc. S1099-0062(97)12-096Manuscript submitted January 12, 1998; revised manuscript received March 22, 1998. The In 0.49 Ga 0.51 P/Al 0.5 In 0.5 P heterostructure is lattice matched to GaAs, making it useful as a replacement for AlGaAs/GaAs in high electron mobility transistors, heterojunction bipolar transistors, and visible light emitting diodes and lasers. [1][2][3][4][5][6][7][8][9][10] In developing device fabrication processes it is necessary to have wet and dry etches that are highly selective for one material over another. For the InGaP/GaAs and AlInP/GaAs systems, Lothian et al. 11,12 reported such recipes previously. However, there has been little work on selective dry etches for the InGaP/AlInP system. In nonselective etching it is possible to use Cl 2 /CH 4 /H 2 /Ar discharges under high density plasma conditions. 13 Chlorine-based plasma chemistries such as Cl 2 /Ar, BCl 3 /Ar, or BCl 3 /N 2 do not provide much etch selectivity for InGaP/AlInP. 14,15 Little work has been done on alternative chemistries such as those based on I 2 or Br 2 .1 6,17 In this paper, we show that two new plasma chemistries for etching compound semiconductors, namely, BI 3 and BBR 3 , provide excellent selectivities for InGaP over AlInP under inductively coupled plasma (ICP) conditions. We have measured this selectivity as a function of plasma composition and high density source power, and also measured the selectivity of InGaP over two common masking materials, SiO 2 and SiN x .The InGaP and AlInP layers were grown lattice matched to undoped, (100) GaAs substrates by metallorganic molecular beam epitaxy (MOMBE) 18 or metallorganic chemical vapor deposition (MOCVD). 19 The layers were nominally undoped (n ~ 3 ؋ 10 16 cm -3 ). Etching was performed in a Plasma Therm 790 reactor, in which the plasma is generated in a three-turn ICP source operating at 2 MHz and powers up to 1000 W. Samples were thermally bonded to a Si carrier wafer, which was mechanically clamped to an rf-powered (13.56 MHz, 150-450 W) He back side cooled chuck. The process pressure was held constant at 5 mTorr. Approximately 50 g of either BI 3 (mp 44°C) or BBr 3 (bp 91.2°C) was placed in a quartz container inside a stainless steel vacuum vessel heated to ~45°C to increase the vapor pressure of the reactants. The resultant vapors were injected into the ICP source through electronic mass flow controllers at rates up to 10 standard cubic centimeters per minute (sccm). Argon was typically mixed in with the BI 3 or BBr 3 to assist plasma ignition. Etch rates were measured by stylus profilometry of patterned features. Figure 1 shows etch rate...

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0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers

Cited by 6 publications

References 5 publications

Gate length scaling in high performance InGaP/InGaAs/GaAs pHEMTs

Gate length scaling in high performance InGaP/InGaAs/GaAs pHEMTs

Performance dependence of InGaP/InGaAs/GaAs pHEMTs on gate metallization

High Selectivity Dry Etching of InGaP Over AlInP in BI[sub 3] and BBr[sub 3] Plasma Chemistries

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