Graphene was obtained on Cu foil by thermal decomposition method. A gas mixture of H 2 and CH 4 and an ambient annealing temperature of 1,000℃ were used during the deposition for 30 Min., and for the transfer onto SiO 2 /Si and Si substrates. The physical properties of graphene were investigated with regard to the effect ofnitrogen atom doping and the various substrates used. The G/2D ratio decreased when the graphene became monolayer graphene. The graphene grown on SiO 2 /Si substrate showed a low intensity of the G/2D ratio, because the polarity of the SiO 2 layer improved the quality of graphene. The intensity of the G/2D ratio of graphene doped with nitrogen atoms increased with the doping time. The quality of graphene depended on the concentration of the nitrogen doping and chemical properties of substrates. High-quality monolayer graphene was obtained with a low G/2D ratio. The increase in the intensity of the G/2D ratios corresponded to a blue shift in the 2D peaks.
Graphene thin film was prepared on the copper foils by chemical deposition, and the characteristic of graphene depending on H2 and CH4 gas flow rates was analyzed by the Raman spectra. The graphene formation was improved with increment of methan gas flow rates. The increment of hydrogen gas flow rate made high intensity of D(1350 cm -1 ) and G(1580 cm -1). The peak of D(1350 cm -1 ) is related with the defects, and the 2D(2700 cm -1 ) increased depending on the increment of amount of methan gas flow rate. The rate of G/2D indicates the quality of garphene to like a monolayer, and the small value of G/2D means better grapheme. The G/2D of graphene after annealed at 200℃ was 0.55 and improved the characteristic of graphene than the deposited-grapnene. Thin film transistor with graphene as an active channel was p-type semiconductor.
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