Analysis of Characteristic of Graphene Thin Film Transistor and Properties of Graphene using Copper Substrate

Abstract

Graphene thin film was prepared on the copper foils by chemical deposition, and the characteristic of graphene depending on H2 and CH4 gas flow rates was analyzed by the Raman spectra. The graphene formation was improved with increment of methan gas flow rates. The increment of hydrogen gas flow rate made high intensity of D(1350 cm -1 ) and G(1580 cm -1). The peak of D(1350 cm -1 ) is related with the defects, and the 2D(2700 cm -1 ) increased depending on the increment of amount of methan gas flow rate. The rate of G/2D indicates the quality of garphene to like a monolayer, and the small value of G/2D means better grapheme. The G/2D of graphene after annealed at 200℃ was 0.55 and improved the characteristic of graphene than the deposited-grapnene. Thin film transistor with graphene as an active channel was p-type semiconductor.