In this paper, a 50ns 256-kb EEPROM IP for MCU (micro controller unit) ICs is designed. The speed of data sensing is increased in the read mode by using a proposed DB sensing circuit of differential amplifier type which uses the reference voltage, and the switching speed is also increased by reducing the total DB parasitic capacitance as a distributed DB structure is separated into eight. Also, the access time is reduced reducing a precharging time of BL in the read mode removing a 5V NMOS transistor in the conventional RD switch, and the reliability of output data can be secured by obtaining the differential voltage (ΔV) between the DB and the reference voltages as 0.2*VDD. The access time of the designed 256-kb EEPROM IP is 45.8ns and the layout size is 1571.625μm × 798.540μm based on MagnaChip's 0.18μm EEPROM process.
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