Dot arrays of Co-Pt with a dot density of 1 Tdot/in 2 were fabricated using electron beam writing. Low-energy ion etching was used to prevent the dots from deteriorating the magnetic properties. We found from the magnetic properties measured using x-ray magnetic circular dichroism that etching with low-energy ions not only caused little damage to the magnetization but also that the anisotropy field of the dots resulted in high coercivity. These results demonstrate the effectiveness of etching with low-energy ions to achieve bit-patterned media with an areal density of 1 Tbit/in 2. Furthermore, the magnetic dot array with a dot period of 25 and 30 nm was fabricated by electron beam writing and etching with low-energy ion. Coercivity of these dot arrays was found to be more than 5 kOe.
A flat-patterning method that exploits ferromagnetic (FM)-antiferromagnetic (AF) transition in[001]-oriented L10 FePt1-xRhx films was investigated. FM-AF patterns with several dot diameters (D) were fabricated by locally diffusing a small percentage of FePt atoms onto the FePt1-xRhx film. The geometric and magnetic properties of the patterns were analyzed in detail. Only areas whose composition crossed the FM-AF threshold underwent a magnetic phase change to the FM phase. FM dots with single-domain structures were observed by magnetic force microscopy in the AF matrix in a range of D ≤ 100 nm.
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