We have demonstrated a quantum cascade laser (QCL) with a generation frequency of about 3.8 THz, grown by metal-organic vapor phase epitaxy. The multilayer heterostructure for QCLs consists of 185 repetitions of an active module containing four GaAs/Al0.15Ga0.85As quantum wells. The threshold current and threshold voltage of the fabricated QCL were 2.25 kA/cm2 and 19.7 V, respectively. The QCL was generated in the multimode regime, and the detection of terahertz radiation continued with an increase in the laser temperature up to 60 K.
Current switches based on low-voltage InP heterothyristors with a maximum blocking voltage of 20V were developed and studied. In current pulse generation mode, the efficient operation of InP heterothyristors with a low-resistance load in the form of a capacitor was demonstrated. It has been shown that the minimum turn-on delay time is about 6 ns at a control current amplitude of 60 mA. The possibility of generating current pulses with a duration of 53–154 ns and amplitudes of 38–130 A was demonstrated when the capacitor values were changed in the range of 56–1000nF.
The switching on process spatial dynamics of a laser-thyristor based on an AlGaAs/InGaAs/GaAs heterostructure with a thin p-base has been studied. The heterostructure had a modified base with a middle-doped layer at the n-emitter, which makes it possible to increase the operating voltages in order to generate nanosecond current pulses. In laser thyristor pulsed sources based on the proposed heterostructure, a high degree of current flow region localization arising during turn on process of the device was demonstrated. Using the current localization regions luminescence, the propagation dynamics of the switched-on state was estimated. The anode contact sizes required for the nanosecond range pulsed current switches or laser emitters development are obtained.
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