Исследование пространственной динамики включения лазера-тиристора (905 нм) на основе многопереходной гетероструктуры AlGaAs/InGaAs/GaAs

Abstract

The switching on process spatial dynamics of a laser-thyristor based on an AlGaAs/InGaAs/GaAs heterostructure with a thin p-base has been studied. The heterostructure had a modified base with a middle-doped layer at the n-emitter, which makes it possible to increase the operating voltages in order to generate nanosecond current pulses. In laser thyristor pulsed sources based on the proposed heterostructure, a high degree of current flow region localization arising during turn on process of the device was demonstrated. Using the current localization regions luminescence, the propagation dynamics of the switched-on state was estimated. The anode contact sizes required for the nanosecond range pulsed current switches or laser emitters development are obtained.