Liquid-phase exfoliation of zirconium trisulfide (ZrS3) was used to produce stable and ready-to-use inks for solution-processed
semiconductor thin-film deposition. Ribbon-like layered crystals of
ZrS3 were produced by the chemical vapor transport method
and were then exfoliated in three different solvents: dimethylformamide,
ethanol, and isopropyl alcohol. The resulting ZrS3 dispersions
were compared for stability and the ability to form continuous films
on top of the perovskite layer in light-emitting diodes with the ITO/PEDOT:PSS/MAPbBr3/2D-ZrS3/LiF/Al structure. Film deposition was
performed by using either spray or slot-die coating methods. The slot-die
coating route proved to produce better and more uniform films with
respect to spray coating. We found that the 2D ZrS3 electron
injection layer (EIL) stabilized the interface between the perovskite
and LiF/Al cathode, reducing the turn-on voltage to 2.8 V and showing
a luminance that does not degrade during voltage sweep. On the other
hand, EIL-free devices show electroluminescence on the first voltage
sweep that reduces almost to zero in the subsequent sweeps. Combining
physical device simulation and density functional theory calculation,
we are able to explain these results in terms of lowering the electron
injection barrier at the cathode.
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