The results of investigations of light-emitting diodes based on heterostructures with an InAs active region grown by liquid phase and metalorganic vapor-phase epitaxy over the last decade are reviewed. The near-field pattern, L – I and I – V characteristics, and quantum efficiency of point-contact and flip-chip light-emitting diodes are analyzed in a wide temperature range.
Приведены результаты исследований фотоэлектрических, вольт-амперных и вольт-фарадных характеристик фотодиодов (ФД) на основе гетероструктур InAsSbP/InAs, работающих при комнатной температуре и чувствительных в диапазоне длин волн 2.6−2.8 µm. Полученные характеристики ФД и анализ литературных данных позволяют судить о перспективности использования таких фотоприемников в ряде практических приложений.
We discuss photoelectrical properties of an on-chip attenuated total reflection (ATR) sensor for the ethanol concentration measurements in an aqueous solution. The on-chip sensor/microchip was made from a p-InAsSbP/n-InAs monolithic double heterostructure with three mesas/individual diodes grown on a single n⁺-InAs substrate/waveguide. Two heterostructure diodes were used as photodiodes, while the third one - as a LED. The ethanol concentration was measured via an algorithm based on analysis of the I–V characteristic parameters of a photodiode and the L–I characteristics of an LED.
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