The Ag/Ge/Si(001) stacks with threading dislocations in Ge layer demonstrating the I-V curves typical for the bipolar resistive switching were investigated. Cross-sectional transmission electron microscopy and electron beam induced current measurement confirmed the resistive switching mechanism to be the formation of conductive filaments consisting of the Ag atoms across the entire Ge layer via the electric-field driven transport of Ag+ ions along the threading dislocations.
It is shown that two modes of resistive switching – bipolar and volatile unipolar – are peculiar for the Ag/Ge/Si structures with germinating dislocations in the germanium layer. In this modes the structures have stable states of electric current with ION/IOFF ~1.5–2.7. The volatile unipolar type of switching can be caused by the capture of charge carriers to deep levels associated with lattice defects in the Ge film of the memristor. At the same time, bipolar switching is associated with the drift of Ag+ ions along germinating dislocations.
We consider the polynomials tφnpz, wqu orthogonal on the circle with respect to a weight w that satisfies w, w´1 P L 8 pTq and show that }φnpe iθ , wq} L 8 pTq can grow in n at a certain rate.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.