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Oxygen impurity in Germanium single crystals has been characterized using Fourier transformed infrared spectrometry. The crystals were grown by Czochralski method in an argon atmosphere. The oxygen concentration in crystals was determined on optical density from the absorption band at 843 cm−1. It was established that oxygen dissolved concentration in Germanium is variable from 0,2·1016 to 1,3·1016 сm−3. The oxygen band maximum shifts toward 856 cm−1 when its concentration increases under the influence of annealing in the oxygen containing atmosphere with ≤ 10−3 Па.
The morphology of the growth surface of germanium single crystals grown by directed crystalliza tion and the Czochralski method is studied by interference profilometry, optical microscopy, and scanning electron microscopy (SEM). Stable periodic profile distributions on different time scales (~3 and ~0.3 s) indicating changes in the crystallization kinetics are revealed on the upper surface of disks grown by directed crystallization and the lateral cylindrical surface of Czochralski pulled boules. Based on known data on temper ature fluctuations at the crystal-melt interface and the parameters of the crystal's surface profile and growth rates measured in this study, the kinetic coefficients are estimated to be β K = (2 × 10 -6 -7 × 10 -7 ) m s -1 K -1 . The two dimensional pattern of irregularity distribution on the surfaces indicates the stepwise growth of the {111} singular faces according to the layer by layer mechanism. A correlation between profile irregularities and periodicity in the distribution of dislocation etch pits over the radius and lateral crystal surface is revealed on juvenile crystal surfaces.
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