Effect of the microstructure on electrical properties of high-purity germanium

Подкопаев, О. И.; Shimanskii, A. F.; Molotkovskaya, N. O.; Kulakovskaya, T. V.

doi:10.1134/s1063783413050296

Cited by 5 publications

(3 citation statements)

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“…These data demonstrate that, after zone refining, the fraction of the ingot with ρ ≥ 47 Ω cm is approximately 50%. The resistivity values above 47 Ω cm at the beginning of the ingot are due to the fact that, after zone refining, the measurements were performed on monocrystalline blocks cut from the solidified ingot, as distinct from the resistivity measurements on GPZ polycrystalline samples, whose results are influenced by the presence of surface states, as shown previously [15].…”

Section: μMmentioning

confidence: 84%

Amorphous silica containers for germanium ultrapurification by zone refining

et al. 2016

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We have studied the wetting behavior of molten germanium on silica ceramics and amorphous silica coatings in vacuum at a pressure of 1 Pa and a temperature of 1273 K. The results demonstrate that the wetting of rough surfaces of ceramic samples and coatings by liquid Ge is significantly poorer than that of the smooth surface of quartz glass. The contact angle of polished glass is ~100°, and that of the ceramics and coatings increases from 112° to 137° as the total impurity content of the material decreases from 0.120 to 1 × 10-3 wt %. Using experimental contact angle data, we calculated the work of adhesion of molten Ge to the materials studied. Its value for the surface of the ceramics and coatings decreases from 0.45 to 0.20 J/m 2 with decreasing impurity content, whereas the work of adhesion to a smooth glass surface is 0.55 J/m 2. We have fabricated fused silica test containers coated with high-purity amorphous silica. Using horizontal zone refining, we obtained germanium samples with a carrier concentration difference on the order of 10 11 cm-3 .

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Section: μMmentioning

confidence: 84%

Amorphous silica containers for germanium ultrapurification by zone refining

et al. 2016

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“…The conductivity of a few inorganic semiconductors, i.e., germanium, can reach a magnitude of 10 1 S cm À1 in their pristine state. 7 The conductivities of other inorganic semiconductors, i.e., GaAs and CdS, are in the range between 10 À7 S cm À1 and 10 0 S cm À1 . [8][9][10] For the pristine conjugated polymers, their conductivities are in the same range as those of most of the inorganic semiconductors.…”

Section: John H Xinmentioning

confidence: 99%

“…, germanium, can reach a magnitude of 10 1 S cm −1 in their pristine state. 7 The conductivities of other inorganic semiconductors, i.e. , GaAs and CdS, are in the range between 10 −7 S cm −1 and 10 0 S cm −1 .…”

Section: Introductionmentioning

confidence: 99%