Silica glass implanted with Zn ions of 60keV to 1.0×1017ions∕cm2 was annealed in oxygen gas to form ZnO nanoparticles (NPs). In as-implanted state, the implanted Zn atoms form Zn metallic NPs inside of the silica. After annealing at 600°C, ZnO NPs form on the surface, while Zn metallic NPs still remain in the deep region. At 700°C, most of Zn atoms move to the surface to form the droplet-shaped ZnO NPs which show two photoluminescence bands, i.e., an exciton band at 375nm and a defect band at ∼500nm. The defect band almost disappears in the samples annealed at 600°C, which include both ZnO NPs and Zn NPs.

The conversions of NiAs-type structures of transition metal chalcogenides (FeS and CoSe) to pyrite-type structures of dichalcogenides (FeS(2) and CoSe(2), respectively) under irradiation by HeNe laser (wavelength, 632.8 nm; intensity, 6 x 10(4) W/cm(2)) have been investigated using Raman spectroscopy. The laser-induced conversions give rise to Raman peaks corresponding to vibrations of S-S or Se-Se bonds of respective pyrite structures. The results are of interest for the characterization and fabrication of pyrite-like structures necessary for applications as oxygen reduction reaction catalysts. Material modifications at the micrometer and submicrometer levels are attainable. The structural conversions are accompanied by self-polymerization of excess chalcogen. Extended laser irradiation (>500 s) in air induces the substitution of chalcogen (S or Se) by oxygen in the chalcogenide materials and the subsequent formation of transition metal (Fe or Co) oxides. Excess chalcogen appears to prevent further oxidation. The article also presents conditions necessary to avoid laser-induced structural changes and oxidation of metal chalcogenide materials during Raman measurements.

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The morphology and chemical composition of the surface of SiO2 that had been implanted with Zn ions of 60keV and annealed in two different atmospheres, i.e., oxygen gas and a vacuum, were compared. In the as-implanted state, the surface mainly consisted of SiO2 with low roughness due to radiation-induced smoothing. A large number of domelike structures of ZnO appeared on the surface of the SiO2 after annealing in oxygen gas at 600°C for 1h, and the size increased with the annealing temperature up to 800°C. After annealing at 900°C, the surface roughness steeply decreased and the composition changed to Zn2SiO4.

Two different methods were applied to fabricate cuprous-oxide (Cu2O) nanoparticles (NPs) in silica glasses (SiO2), namely (i) low oxygen-pressure (LOP) oxidation of Cu NPs, which had previously been formed in SiO2by implantation of Cu ions and (ii) two-step annealing of Cu NPs in atmospheric-pressure oxygen gas (to convert Cu NPs to CuO) and in LOP-Ar gas (to convert CuO to Cu2O). The LOP oxidation at 800 °C converts a small portion of Cu NPs to the Cu2O phase, but most of the Cu NPs survive in the metallic state. By increasing the oxidation temperature to 900 °C, the Cu2O phase dissolves. On the other hand, the two-step annealing at different oxygen pressures converts all the Cu species to Cu2O NPs. Any diffraction peaks due to Cu NPs or CuO NPs, except Cu2O NPs, were not observed.

We have investigated wavelength dispersion of photo-induced nonlinear dielectric function of Au nanoparticle materials. Transient transmission and reflection spectra were sequentially measured by the pump-probe method with a femtosecond laser system. The dispersion of real and imaginary parts of the nonlinear dielectric function of Au:SiO(2) nanoparticle material in the vicinity of the surface plasmon resonance was evaluated from these transient spectra with total differential. A local electromagnetic field factor and interband transition in Au nanoparticles directly dominate the dispersion.

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