Quantum dots (QDs) of Cds, PbS, and InSb semiconductors in a multi-grain layer of planar-edge microstructure were studied. A model of the ordered arrangement of CT in the micro-gap structure and the flow of current along the lines of parallel arrangement of QD is proposed. Electronic transport at low voltage values (less than 8 V) is determined by thermal and tunnel emission from the QD into the gap, at high values - by the charge restriction in the QD according to the Coulomb block model. A strong influence of IR and UV radiation on the VAC was found.
The structural and electrical properties of PbS nanoparticles (40–70 nm), produced by a chemical reaction of sodium hydroxide with lead nitrate and electrophoretically deposited onto a conductive substrate, are investigated. The composition and structure of the nanoparticles are identified by X-ray analysis as pure PbS phase with a face-centered cubic lattice. Several minima, related to plasma-resonance absorption at 10–17 μm, are observed in the frustrated total internal reflection (FTIR) spectra. The layer morphology and the nanoparticle shape and sizes are determined by scanning electron and tunneling microscopy. The threedimensional topograms show that the surface fine structure is a set of faceted pyramidal spikes with a size of 5–10 nm and a density of ~400 μm^–2. An analysis of the tunneling current–voltage characteristics of individual nanospikes shows the presence of low-field emission and makes it possible to determine the barrier heights (1.6–1.8 eV), which are explained within the quantum-dot (QD) model.
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