On the example of InP/InAsP/InP nanowires, the role of theoretical models in the photodynamics study of hybrid semiconductor structures is considered. The photodynamics of luminescence of an array of InP/InAsP/InP nanowires formed by molecular beam epitaxy on a Si (III) substrate was studied. Based on a comparison of several kinetic models, including the use of poly-exponential and stretched-exponential functions, the analysis of experimental data is carried out. Experiments were performed by excitation with laser radiation of 633 nm at room temperature. It has been shown that the luminescence decay kinetics of the InAsP nanoinsert is best described in terms of the contact quenching model. The total decay time of the excited state (radiation lifetime) of the InAsP insert was estimated at τ ~ 40 ns. The reasons for the unusually long duration of transfer of excitation from InP have been suggested.
A composite nanostructure based on quasi-one-dimensional InP nanowires with an InAsP nanoinsert, grown on a Si(111) substrate by the method of molecular-beam epitaxy, and CdSe/ZnS zero-dimensional colloidal quantum dots is reported for the first time. The nonradiative resonance energy transfer between components of the hybrid nanostructure, namely, between the colloidal quantum dots and the nanoinsert, is experimentally confirmed.
We present the results of experimental studies on the synthesis by molecular-beam epitaxy of AlGaAs nanowires with InAs quantum dots. The morphological, structural, and optical properties of the grown nanostructures have been studied. It is important to note that the emission from quantum dots is observed in the wavelength range from 750 to 970 nm. Assumptions about the nature of short-wavelength emission from quantum dots are formulated. In particular, one of the reasons may be a significant desorption of indium atoms and the presence of gallium atoms in catalyst drops during the growth at a substrate temperature of 510◦C. The proposed technology opens up new possibilities for integration direct-gap III−V materials with a silicon platform for various applications in photonics and quantum communications.
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