Thin films of the congruent composition of the barium-strontium niobates solid solutions Sr0.61Ba0.39Nb2O6 (SBN: 61) with thicknesses from 30 to 630 nm on a MgO (001) substrate were fabricated by RF-cathode sputtering in an oxygen atmosphere. By X-ray diffraction it was found that the films are epitaxial and there are no impurities in them. In the films, there is practically no unit cell deformation in the interface plane and tensile strain is present in the normal to the surface direction, which increases with decreasing film thickness. Dielectric measurements indicate high tunability in the films.
Studies of the structure, dielectric and optical properties of thin films of a relaxor ferroelectric Ba_0.5Sr_0.5Nb_2O_6 grown on Pt(111)/Al_2O_3 (c-cut) substrate by high-frequency RF-sputtering in oxygen atmosphere, were performed. X-ray diffraction studies showed that Ba_0.5Sr_0.5Nb_2O_6 films are c-oriented. The unit cell parameters in the tetragonal approximation were c = 3.949(1) Å and a = 12.38(1) Å. It was established that the ferroelectric–paraelectric phase-transition temperature rises and optical anisotropy increases in the object in comparison with the bulk material. Reasons for the elucidated regularities are discussed.
The crystal structure and Mossbauer spectroscopy studies results for BiFeO3 film growth on the MgO(001) single crystal substrate are present in the paper. It been shown that film have high crystal perfection and low defectiveness which results in appearing of narrow lines during the θ-2θ and φ scanning and the small (lower than 0.7°) disorientation of film and substrate crystal axes. It is been revealed that unit cell of BiFeO3/MgO(001) heterostructure possess monoclinic symmetry and deformation of unit cell is negligible. The Mossbauer study shows that magnetic subsystem of film has spatial spin-modulated structure with zero value of anharmonicity parameter (m). This indicate that at room temperature the magnetic anisotropy changes from the "easy axis" type to "easy plane" type.
Pb(ZrTi)O3/Ba0.2Sr0.8TiО3/Si(001) metal-ferroelectric-semiconductor hetero-structures were fabricated by radio-frequency cathodic sputtering. It was found that Pb(ZrTi)O3 films are single-phase, textured, and Ba0.2Sr0.8TiО3 sublayer thickness in-fluence on the texture preferred orientation (110 or 001). It has been shown that by varying the sublayer thickness and / or the amplitude of one period of the applied ex-ternal bipolar electric field, it is possible to create different electrophysical states of the structure. These electrophysical states can be used in creating of the memory cells and, in particular, a multi-level memory cells.
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