The effect of H2, NH3, CO and O2 on the electrically
conductive properties of In2O3 films grown by halide vapor phase
epitaxy has been studied. In the temperature range of 200−550°C,
In2O3 films demonstrate gas sensitivity to all considered gases,
a relatively high operation speed and repeatability of cycles.
The greatest response to NH3 was obtained, which exceeded
33 arb.units at a temperature of 400°C and a gas concentration
of 1000 ppm. A qualitative mechanism of gas sensitivity of In2O3
films is proposed. The obtained gas-sensitive characteristics are
compared with known NH3 sensors based on various materials.
It is shown that the method of halide vapor phase epitaxy makes
it possible to obtain indium oxide films with high gas sensitivity
α-Ga2O3/α-Cr2O3 heterostructures with a corundum structure were obtained by chloride vapor phase epitaxy and magnetron sputtering. The structural, electrical conductive and photoelectrical properties of the obtained samples were studied. It was established that the α-Ga2O3/α-Cr2O3 heterostructures exhibits weak rectifying properties and in comparison with α-Ga2O3 films has a higher response speed when exposed to ultraviolet radiation.
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