Abstract:The effect of H2, NH3, CO and O2 on the electrically
conductive properties of In2O3 films grown by halide vapor phase
epitaxy has been studied. In the temperature range of 200−550°C,
In2O3 films demonstrate gas sensitivity to all considered gases,
a relatively high operation speed and repeatability of cycles.
The greatest response to NH3 was obtained, which exceeded
33 arb.units at a temperature of 400°C and a gas concentration
of 1000 ppm. A qualitative mechanism of gas sensitivity of In2O3
films is proposed.… Show more
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