The growth of cubic and rhombohedral In2O3 and (InGa)2O3 epitaxial films by halide vapor phase epitaxy (HVPE) is reported. The deposition is carried out at 625 °C using indium trichloride (InCl3), gallium monochloride (GaCl), and O2 precursors on (0001) sapphire substrates, HVPE‐grown Ga2O3/Al2O3 and metal‐organic chemical vapor deposition (MOCVD)‐grown GaN/Al2O3 templates. The HVPE growth of phase pure In2O3 and (InGa)2O3 with corundum structure is reported for the first time.
Direct energy deposition (DED) is an additive manufacturing method that allows repairing the broken parts and building the meter-scale samples. However, the printing of large parts is associated with huge residual stresses and martensite phase formation, which can change the geometry of final samples or initiate the crack. The last factor is especially important for titanium alloys. In this work, we investigated the effect of DED thermal history on the obtained structural and mechanical properties of Ti-6Al-4V using a thermocouple. It was demonstrated that printing with long pauses leads to a¢ phase formation, which embrittles the material. Continuous printing with small pauses between tracks leads to the formation of the dual a+b structure. The effect of the texture on the material properties is also discussed. As a result of the study, the specific DED process parameters allow the same mechanical characteristics for as-built titanium alloy and the alloy after heat treatment.
The ability to predict the influence of dopants (such as antimony) on the shortrange structure of As-S-I glasses has the potential to help design glasses with modified properties. In the present work, the short-range structure of As-Sb-S-I glasses has been investigated along AsSI-SbSI section of fixed sulfur and iodine concentrations and equivalent arsenic by antimony substitution. At high arsenic content (As:Sb≥2:1) antimony substitutes arsenic in AsI 3 molecules justified by Raman spectroscopy and XPS. Further antimony introduction (As:Sb<2:1) leads to the substitution of arsenic by antimony in -S-As-S-polymeric chains, leading to SbSI crystallization justified by XRD. The resulting two-dimensional schematic diagrams represent the AsSI-SbSI glasses short-range structure and show the mechanism of arsenic by antimony substitution.
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