The switching on process spatial dynamics of a laser-thyristor based on an AlGaAs/InGaAs/GaAs heterostructure with a thin p-base has been studied. The heterostructure had a modified base with a middle-doped layer at the n-emitter, which makes it possible to increase the operating voltages in order to generate nanosecond current pulses. In laser thyristor pulsed sources based on the proposed heterostructure, a high degree of current flow region localization arising during turn on process of the device was demonstrated. Using the current localization regions luminescence, the propagation dynamics of the switched-on state was estimated. The anode contact sizes required for the nanosecond range pulsed current switches or laser emitters development are obtained.
Current switches based on low-voltage InP heterothyristors with a maximum blocking voltage of 20V were developed and studied. In current pulse generation mode, the efficient operation of InP heterothyristors with a low-resistance load in the form of a capacitor was demonstrated. It has been shown that the minimum turn-on delay time is about 6 ns at a control current amplitude of 60 mA. The possibility of generating current pulses with a duration of 53–154 ns and amplitudes of 38–130 A was demonstrated when the capacitor values were changed in the range of 56–1000nF.
The spatiotemporal dynamics of optical losses and carrier density in a heterostructure of a semiconductor laser with a segmented contact were studied using an optical probe technique based on the coupling of probe radiation with a wavelength of 1560 nm into a semiconductor laser chip under investigation based on an AlGaAs/ InGaAs/ GaAs heterostructure and emitting at a wavelength of 1010 nm. It has been shown that the use of a probe beam with a wavelength of 1560 nm makes it possible to ensure the sensitivity of the measurement of internal optical losses of no worse than 1 cm-1. The use of a segmented design of the current pumping region made it possible to estimate the absolute value of internal optical losses. It was shown that a change in the configuration of the Fabry-Perot eigenmodes of the laser affects the distribution of charge carriers and internal optical losses both in the current pump region and in the passive part of the laser chip that is not pumped by the current.
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