The article considers the results of studies of the emission spectra of Kr, Xe upon excitation by pulsed laser radiation. We used Nd: YAG laser, λ = 1064 nm, τ = 5 ns, and Epulse = 0.8 J. The spectral range of 30-200A was studied. We used capillary with d = 500 μm and supersonic conical nozzles with dcr = 145 μm, 2α = 12o, L = 5 mm, and dcrit = 450 μm, 2α = 11o, L = 5 mm to form a gas jet. The emission spectra for various gas targets were obtained, the obtained spectra were deciphered, and the ions emitting in this spectral range were determined. We observed that with increasing particle concentration in the zone of laser spark, the radiation intensity increases. In this case, the intensity of ion lines with high degrees of ionization increases faster.
The radiation spectra in the soft X-ray and extreme ultraviolet wavelength ranges of thin-film (0.15 microns thick) targets made of light materials (Si, C, Be) were studied when excited by a Nd:YAG laser pulse with a duration of 5.2 ns focused to an intensity of ~10^12 W/cm^2. Line spectra of BeIII, BeIV, CV, and SiV ions were recorded using a spectrometer based on a multilayer X-ray mirror. A comparison with the spectra of bulk solid-state targets of the same materials is carried out. In all cases, there was a decrease in the intensity of the lines of the soft X-ray spectrum of film targets compared to monolithic ones; the decrease was, depending on the material, from several tens of percent to several times, with more than an order of magnitude less mass of the vaporized substance.
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