ABSTRACT:The process of capturing and modelling buildings has gained increased focus in recent years with the rise of Building Information Modelling (BIM). At the heart of BIM is a process change for the construction and facilities management industries whereby a BIM aids more collaborative working through better information exchange, and as a part of the process Geomatic/Land Surveyors are not immune from the changes. Terrestrial laser scanning has been proscribed as the preferred method for rapidly capturing buildings for BIM geometry. This is a process change from a traditional measured building survey just with a total station and is aided by the increasing acceptance of point cloud data being integrated with parametric building models in BIM tools such as Autodesk Revit or Bentley Architecture. Pilot projects carried out previously by the authors to investigate the geometry capture and modelling of BIM confirmed the view of others that the process of data capture with static laser scan setups is slow and very involved requiring at least two people for efficiency. Indoor Mobile Mapping Systems (IMMS) present a possible solution to these issues especially in time saved. Therefore this paper investigates their application as a capture device for BIM geometry creation over traditional static methods through a fit-for-purpose test.

An update of the inventory of alien marine species from the coastal and offshore waters of Greece is presented. Records were compiled based on the existing scientific and grey literature, including the HCMR database of Greek alien species (ELNAIS), technical reports, scientific congresses, academic dissertations, websites, and unpublished/personal observations. 47 species were added to the inventory, including 34 invertebrates, one vertebrate (fish), three plants, eight protozoa, and one cyanobacterium. With the new records, the inventory of alien marine species of Greece now includes a total of 237 species (33 macrophytes, 131 invertebrates, 42 vertebrates, two bacteria and 29 protozoans). Among these, the presence of the gastropod Hypselodoris infucata, the bivalves Dendrostrea frons and Septifer forskali and the chondrichthyan Rhizoprionodon acutus is reported here for the first time. Based on molecular analysis, the occurrence of Bulla arabica in Greek waters is confirmed, and the suggestion that previous records of Bulla ampulla in the Mediterranean should be considered as misidentification of B. arabica is further supported. The acclimitization status of earlier records was revised in the light of new data, and thus the fish Enchelycore anatina, Seriola fasciata and Tylerius spinosissimus, the red algae Hypnea cornuta and Sarconema scinaioides, the scyphomedusa Cassiopea andromeda, the cephalopod Sepioteuthis lessoniana, the nudibranch Chromodoris annulata and the bivalves Gastrochaena cymbium and Pseudochama corbieri were upgraded from casual records to established populations. The increased rate of introductions of warm water species confirms previous findings, which link the rate of introduction in the eastern Mediterranean to climate change.

Following the IAEA Technical Meeting on "Advanced Methodologies for the Analysis of Materials in Energy Applications Using Ion Beam Accelerators", this paper reviews the current status of ion beam analysis techniques and some aspects of ion-induced radiation damage in materials for the field of materials relevant to fusion. Available facilities, apparatus development and future research options and challenges are presented and discussed. The analysis of beryllium and radioactivity-containing samples from future experiments in JET or ITER represents not only an analytical but also a technical challenge. A comprehensive list of xxxx-xxxx/xx/xxxxxx 1

The origin of the superstructure observed in epitaxial yttrium oxide (Y2O3) layers on Si (001) is determined by electron energy loss spectroscopy (EELS). The oxygen K edge is measured both in the superstructure and a defect-free region of the Y2O3 layers and they are compared to EELS spectra obtained from bulk stoichiometric and reduced Y2O3. It is shown that as a result of the epitaxial growth, oxygen vacancies order into a superstructure creating nonstoichiometric regions in an otherwise stoichiometric Y2O3 layer. Furthermore, it is shown that oxygen deficiency introduces a change of the density of states of the lower conduction band of Y2O3.

A method of analyzing the complex admittance of metal-insulator-semiconductor (MIS) structures has been developed with the aim to extract the density and capture cross section of interface traps from combined ac capacitance–voltage and conductance–voltage measurements at different frequencies. The procedure is applied to study dielectric stacks based on La2Hf2O7 high-κ dielectric, which could be considered as a SiO2 replacement for future transistors.

A study of the surface morphology of homoepitaxial GaAs(001) by means of ex situ atomic force microscopy in air reveals the reentrance of mounding behavior at low growth temperatures. A transition from statistical roughening to organized mound formation is observed as the growth temperature is reduced. We show by means of growth simulations that the observed morphology is compatible with anisotropic adatom diffusion in the presence of an Ehrlich-Schwoebel barrier. The mechanism leading to this kind of adatom kinetics at low temperatures is interpreted in terms of surfactant acting arsenic condensing on the surface.

We show that at deposition temperature in the 750–770°C range, the La2Hf2O7 (LHO) compound can be grown crystalline on Si(001). The predominant orientation is (001)LHO∕∕(001)Si and [110]LHO∕∕[110]Si and results in ultimately clean interfaces, indicating a strong tendency for cube-on-cube epitaxy. The ordered pyrochlore and random fluorite phases coexist in the dielectric. Acceptable gate leakage current, negligible hysteresis and high dielectric permittivity κ∼23 were obtained from electrical characterization of metal–insulator–semiconductor capacitors. The quality of interfaces and the good electrical characteristics make crystalline LHO a promising high-κ candidate for the replacement of SiO2 in the gate of future aggressively scaled transistors.

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