A spin valve is a layered structure of magnetic and non-magnetic (spacer) materials whose electrical resistance depends on the spin state of electrons passing through the device and so can be controlled by an external magnetic field. The discoveries of giant magnetoresistance and tunnelling magnetoresistance in metallic spin valves have revolutionized applications such as magnetic recording and memory, and launched the new field of spin electronics--'spintronics'. Intense research efforts are now devoted to extending these spin-dependent effects to semiconductor materials. But while there have been noteworthy advances in spin injection and detection using inorganic semiconductors, spin-valve devices with semiconducting spacers have not yet been demonstrated. pi-conjugated organic semiconductors may offer a promising alternative approach to semiconductor spintronics, by virtue of their relatively strong electron-phonon coupling and large spin coherence. Here we report the injection, transport and detection of spin-polarized carriers using an organic semiconductor as the spacer layer in a spin-valve structure, yielding low-temperature giant magnetoresistance effects as large as 40 per cent.

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As a flourishing member of the two-dimensional (2D) nanomaterial family, MXenes have shown great potential in various research areas. In recent years, the continued growth of interest in MXene derivatives, 2D transition metal borides (MBenes), has contributed to the emergence of this 2D material as a latecomer. Due to the excellent electrical conductivity, mechanical properties and electrical properties, thus MBenes attract more researchers' interest. Extensive experimental and theoretical studies have shown that they have exciting energy conversion and electrochemical storage potential. However, a comprehensive and systematic review of MBenes applications has not been available so far. For this reason, we present a comprehensive summary of recent advances in MBenes research. We started by summarizing the latest fabrication routes and excellent properties of MBenes. The focus will then turn to their exciting potential for energy storage and conversion. Finally, a brief summary of the challenges and opportunities for MBenes in future practical applications is presented.

We have fabricated organic diodes utilizing several pi-conjugated organic semiconductors (OSEC) as spacer layers between La2/3Sr1/3MnO3 (LSMO) and various metallic electrodes, and measured their magnetoresistance (MR) and magnetoelectroluminescence (MEL) responses. The devices exhibit large negative high-field MR responses that resemble the MR response of the LSMO electrode, but amplified by approximately 3 orders in the resistance, and accompanied by a positive high-field MEL effect. These magnetic-field effects result from enhanced carrier injection at the LSMO-OSEC interface that is attributed to the anomalous field-dependent Fermi level shift in LSMO.

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